Zobrazeno 1 - 10
of 50
pro vyhledávání: '"L. Hrubčín"'
Autor:
Yu. B. Gurov, I. Rozova, V. G. Sandukovsky, Bohumír Zat’ko, Vladimir A. Skuratov, Pavol Boháček, S. V. Rozov, L. Hrubčín
Publikováno v:
Physics of Atomic Nuclei. 82:1682-1685
The properties of detectors based on epitaxial layers of silicon carbide (SiC) are presented. It is shown that the developed detectors have good spectrometric characteristics when detecting a particles with energies of up to 8 MeV. The pulse height d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::169a5105f06037812847f1f1a8a4698e
https://doi.org/10.1134/s1063778819120111
https://doi.org/10.1134/s1063778819120111
Autor:
František Dubecký, Mária Sekáčová, Bohumír Zaťko, Zdenko Zápražný, Pavol Boháček, Dušan Korytár, Vladimir A. Skuratov, K. Sedlackova, J. Osvald, A. Sagatova, Vladimír Nečas, L. Hrubčín
Publikováno v:
Applied Surface Science. 461:276-280
In this work we have focused on characterization of the surface barrier detectors on high quality 4H-SiC epitaxial layer. The thickness of the layer was 70 μm and the diameter of circular Au/Ni Schottky contact was 2 mm. The forward and the reverse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b344ec5a5993aac8b3a9e8d0931f369
https://doi.org/10.1016/j.apsusc.2018.07.008
https://doi.org/10.1016/j.apsusc.2018.07.008
Autor:
Mária Sekáčová, Pavol Boháček, Vladimir A. Skuratov, Eva Kováčová, A. Sagatova, Bohumír Zaťko, L. Hrubčín, Yurij Borisovič Gurov, Oleg Michajlovič Ivanov
Publikováno v:
APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2021).
We fabricated and studied 4H-SiC Schottky diodes based on high quality epitaxial layer. We used two different thicknesses of the epitaxial layer, 25 μm and 50 μm. Detectors have Ni Schottky contacts with 3 mm of diameter. The current voltage charac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::993ee4762963c5bfac37a3f514755fdd
https://doi.org/10.1063/5.0067353
https://doi.org/10.1063/5.0067353
Publikováno v:
Materials Science in Semiconductor Processing. 140:106413
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d95e9e624d98784c47cc3bd38e8a9bd
https://doi.org/10.1016/j.mssp.2021.106413
https://doi.org/10.1016/j.mssp.2021.106413
Autor:
Bohumír Zaťko, S. V. Rozov, Yu. B. Gurov, Semen Mitrofanov, O. M. Ivanov, Vladimir A. Skuratov, L. Hrubčín, V. A. Semin, V. G. Sandukovsky
Publikováno v:
Instruments and Experimental Techniques. 61:769-771
The properties of silicon (Si) and silicon carbide (4Н-SiC) detectors after their exposure to different integral fluxes of xenon (Xe) ions are presented. The detectors were irradiated at the IC-100 cyclotron of the Flerov Laboratory of Nuclear React
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1ba3a856b4746005e58efc156c63ebf
https://doi.org/10.1134/s0020441218060192
https://doi.org/10.1134/s0020441218060192
Autor:
B. Zaťko, L. Hrubčín
Publikováno v:
Приборы и техника эксперимента. :5-7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac2adee93da0e4304b43a049a8774ebf
https://doi.org/10.1134/s003281621806023x
https://doi.org/10.1134/s003281621806023x
Autor:
L. Hrubčín, Bohumír Zaťko, Vladimír Nečas, Pavol Boháček, Mária Sekáčová, A. Sagatova, J. Osvald, Eva Kováčová
Publikováno v:
APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2019).
We fabricated and electrically characterized 4H-SiC Schottky diodes based on high quality epitaxial layer. Current-voltage characteristic in forward and reverse direction was measured and calculation of Schottky barrier height, ideality factor and se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26ab8334fed351324d7bcebc47816ecf
https://doi.org/10.1063/1.5119507
https://doi.org/10.1063/1.5119507
Autor:
Bohumír Zaťko, Sergey V. Rozov, Yuriy Halahovets, Eva Kováčová, J. Osvald, A. Sagatova, L. Hrubčín, Pavol Boháček, V.G. Sandukovskij
Publikováno v:
Applied Surface Science. 536:147801
Schottky barrier detectors based on a high-quality 4H-SiC epitaxial layer with varied thickness up to 70 μm were studied. The detectors had front-side circular Ni/Au Schottky contacts and a back-side full-area Ti/Pt/Au ohmic contact. Current-voltage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef086b70d5d2b2c45ba48f5edf7175a5
https://doi.org/10.1016/j.apsusc.2020.147801
https://doi.org/10.1016/j.apsusc.2020.147801
Akademický článek
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Publikováno v:
Applied Surface Science. 533:147389
Schottky barrier height of the diodes prepared on Au/Ni/4H-SiC for surface barrier detectors were studied by electrical methods of I-V and C-V measurements. Analysis of three parameters – barrier height, ideality factor and series resistance of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23b1ce5857caf45f160b3c9c31e036ed
https://doi.org/10.1016/j.apsusc.2020.147389
https://doi.org/10.1016/j.apsusc.2020.147389