Zobrazeno 1 - 3
of 3
pro vyhledávání: '"L. H. Hackett"'
Publikováno v:
MTT-S International Microwave Symposium Digest.
Using a 1/4 µm gate structure, a new millimeter wave FET device has been developed. This device, in a waveguide/MIC amplifier circuit, has demonstrated gains of 5.0 +-0.5 dB from 55 to 62 GHz with a minimum noise figure of 7.1 dB at 60 GHz.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::328a145a679d64d6c8a2b0394c741503
https://doi.org/10.1109/mwsym.1983.1130838
https://doi.org/10.1109/mwsym.1983.1130838
Publikováno v:
IEEE Transactions on Electron Devices. 30:1598-1598
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dc9b608b5ec9a4d0cd3d1707dee3090
https://doi.org/10.1109/t-ed.1983.21390
https://doi.org/10.1109/t-ed.1983.21390
Publikováno v:
IEEE Transactions on Electron Devices. 25:1340-1340
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::884260f718eea071c1423a25b6cf7f28
https://doi.org/10.1109/t-ed.1978.19287
https://doi.org/10.1109/t-ed.1978.19287