Zobrazeno 1 - 8
of 8
pro vyhledávání: '"L. H. Fowler-Gerace"'
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-7 (2024)
Abstract In addition to its fundamental interest, the long-distance spin transport is essential for spintronic devices. However, the spin relaxation caused by scattering of the particles carrying the spin limits spin transport. We explored spatially
Externí odkaz:
https://doaj.org/article/d12a13ec90724caebbec5cfd706e4430
Autor:
D. J. Choksy, S. Hu, Dmitri E. Nikonov, L. H. Fowler-Gerace, E. V. Calman, Leonid Butov, A. K. Geim, Ian A. Young, Artem Mishchenko
Publikováno v:
Nano Letters. 20:1869-1875
Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively controlled by voltage and light. IX quantum Bose gases and IX devices were explored in GaAs heteros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1969789a70428e221d217e86419cec3d
https://doi.org/10.1021/acs.nanolett.9b05086
https://doi.org/10.1021/acs.nanolett.9b05086
Publikováno v:
Conference on Lasers and Electro-Optics.
We present a new mechanism for exciton transport control based on tuning moiré potentials by voltage to enable delocalization, present long-range exciton propagation due to this mechanism, explore correlations between exciton luminescence and propag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b5c246524e28ed899a5cb8239b36ec0
https://doi.org/10.1364/cleo_si.2022.sm2g.3
https://doi.org/10.1364/cleo_si.2022.sm2g.3
Indirect excitons (IXs), also known as interlayer excitons, can form the medium for excitonic devices whose operation is based on controlled propagation of excitons. A proof of principle for excitonic devices was demonstrated in GaAs heterostructures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::244f3e8693d7ef69c60769bff225c051
Publikováno v:
Conference on Lasers and Electro-Optics.
We realize long-range propagation of indirect excitons in a MoSe2/WSe2 heterostructure. The data show that the long-range propagation of indirect excitons is possible in van der Waals heterostructures with the predicted moiré superlattice potentials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b35ccd0eca9bd5a9066c43514b8372da
https://doi.org/10.1364/cleo_si.2021.sth5b.6
https://doi.org/10.1364/cleo_si.2021.sth5b.6
Autor:
E V, Calman, L H, Fowler-Gerace, D J, Choksy, L V, Butov, D E, Nikonov, I A, Young, S, Hu, A, Mishchenko, A K, Geim
Publikováno v:
Nano letters. 20(3)
Indirect excitons (IX) in semiconductor heterostructures are bosons, which can cool below the temperature of quantum degeneracy and can be effectively controlled by voltage and light. IX quantum Bose gases and IX devices were explored in GaAs heteros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f310ad694b28e436dcce0fbe49c24375
https://pubmed.ncbi.nlm.nih.gov/32069058
https://pubmed.ncbi.nlm.nih.gov/32069058
Publikováno v:
Conference on Lasers and Electro-Optics.
We observe transport of indirect excitons over a distance greater than 10 pm in a MoSe2/WSe2 heterostructure. The transport is switched on or off by gate voltage and is observed up to 40 K.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6bb50d5f55116df85fe46c2083cde91
https://doi.org/10.1364/cleo_si.2020.sf2j.6
https://doi.org/10.1364/cleo_si.2020.sf2j.6
Autor:
E. V. Calman, L. H. Fowler-Gerace, L. V. Butov, D. E. Nikonov, I. A. Young, S. Hu, A. Mishchenko, A. K. Geim
Publikováno v:
Conference on Lasers and Electro-Optics.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41474520f947114f4f6de59b8696ae7f
https://doi.org/10.1364/cleo_si.2019.sm1o.4
https://doi.org/10.1364/cleo_si.2019.sm1o.4