Zobrazeno 1 - 6
of 6
pro vyhledávání: '"L. H. Devaux"'
Publikováno v:
Infrared Physics. 15:271-277
Evidence is presented that the incremental resistance-area (RA) product of Pb0.79Sn0.21Te planar photodiodes formed by impurity diffusion in wafers with 77°K hole concentrations of ∼1016cm−3 is limited by bulk diffusion currents. Even with this
Publikováno v:
Infrared Physics. 15:279-285
In recent years, the uniformity and performance of Pb0.80Sn0.20Te arrays at TD = 78°K 2π FOV have been reported. In this paper, the performance of Pb0.80Sn0.20Te in the 60–80°K temperature range is reported. Data are given for a PbTe/PbSnTe mesa
Publikováno v:
Proceedings of the IRE. 47:1475-1478
In recent years, the uniformity and performance of Pb0·80Sn0·20Te arrays at TD = 78°K 2π FOV have been reported. In this paper, the performance of Pb0·80Sn0·20Te in the 60–80°K temperature range is reported. Data are given for a PbTe/PbSnTe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48a1da54fabb75ae3e7f86a7c70a7fad
https://doi.org/10.1016/b978-0-08-020548-9.50007-0
https://doi.org/10.1016/b978-0-08-020548-9.50007-0
Evidence is presented that the incremental resistance-area (RA) product of Pb0·79Sn0·21Te planar photodiodes formed by impurity diffusion in wafers with 77° hole concentrations of ~1016cm-3 is limited by bulk diffusion currents. Even with this lim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc01966139ac7b35f760d61be847ae2c
https://doi.org/10.1016/b978-0-08-020548-9.50006-9
https://doi.org/10.1016/b978-0-08-020548-9.50006-9
Autor:
F. A. Pizzarello, L. H. Devaux
Publikováno v:
Physical Review. 102:85-85