Zobrazeno 1 - 10
of 59
pro vyhledávání: '"L. Gouyet"'
Autor:
Pierre Calvel, Xavier Marie, Robert Ecoffet, D. Standarovski, M. Mauguet, L. Gouyet, N. Andrianjohany, Delphine Lagarde, N. Chatry, L. Azema, R. Marec
Publikováno v:
IEEE Transactions on Nuclear Science. 66:1516-1522
In this paper, we investigate single-event latchup (SEL) in complementary metal–oxide–semiconductor (CMOS)-based flip-flop structures combining heavy ions, laser pulses, and simulation. In the framework of exploring the use of lasers for single-e
Autor:
A. Bosser, L. Gouyet, T. Rajkowski, P. Kohler, P. X. Wang, L. Puybusque, A. Sanchez, Frédéric Saigné
Publikováno v:
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC)
This paper presents the investigation of heavy-ion induced Single-Event Effects, and gamma ray induced Total Ionizing Dose effect on commercial logic devices including buffers and transceivers.
Autor:
L. Gouyet, D. Standarovski, G. Augustin, Robert Ecoffet, W. Rahajandraibe, N. Andrianjohany, K. Coulie, N. Chatry
Publikováno v:
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
We provide an experimental verification of SEE prediction results in continuity of our previous works. The aim of this study is to bring new contributions to the understanding of the various aspects related to prediction issues, and the keys physical
Autor:
L. Gouyet, Robert Ecoffet, P. Pourrouquet, A. Samaras, Francoise Bezerra, N. Chatry, Eric Lorfevre, N. Sukhaseum, B. Vandevelde
Publikováno v:
IEEE Transactions on Nuclear Science. 61:3055-3060
This paper presents the single-event upset characterization of a commercial field programmable gate array (FPGA) using electron radiation. FPGA radiation test results under high energy electrons are described and the dependence between electron energ
Publikováno v:
2017 IEEE Radiation Effects Data Workshop (REDW).
Single event effect susceptibility of a 1-Mbit commercial MRAM was experimentally evaluated. The memory exhibited SEFIs when operated in a dynamic mode with an LET threshold of 2.29 MeV.cm2/mg and a saturated cross section of 2.2×10−4 cm2/device.
Autor:
L. Azema, L. Gouyet, C. Sarrau, Athina Varotsou, A. Samaras, A. Rousset, N. Chatry, B. Vandevelde, L. Salvy, M. Poizat
Publikováno v:
2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
Radiation hardness of active EEE electronic devices with regards to space environment is characterized according to two main aspects: cumulated effects and single event effects. The radiation qualification process includes Total Ionizing Dose (TID),
Autor:
J. Guillermin, David Dangla, A. Rousset, L. Gouyet, R. Gaillard, Eric Lorfevre, N. Chatry, N. Sukhaseum, B. Vandevelde
Publikováno v:
2016 16th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
The work presented here investigates the impact of multiple write cycles on NAND Flash memory radiation sensitivity. Cobalt 60 tests have been performed in order to study the memory array data corruption evolution with respect to the TID level. Heavy
Autor:
Fabien Widmer, R. Marec, Michele Muschitiello, Francoise Bezerra, Jeffrey L. Titus, Veronique Ferlet-Cavrois, Robert Ecoffet, Max Zafrani, N. Sukhaseum, L. Gouyet, S. Liu, Marc Marin, Phillip Sherman
Publikováno v:
IEEE Transactions on Nuclear Science. 59:1125-1129
This paper evaluates protective single event burnout test method on power DMOSFETs to confirm that it provides accurate test results as the destructive test method when performed properly. The selection of resistor values, protective mechanism, and c
Publikováno v:
British Journal of Anaesthesia. 80:294-298
Caudal anaesthesia is indicated for surgical procedures lasting less than 90 min. Fentanyl and clonidine are known to prolong postoperative caudal analgesia, but there are no data on their effect on duration of surgical analgesia. We evaluated if the
Autor:
Fabien Widmeer, L. Gouyet, Ali Zadeh, Lionel Salvy, Veronique Ferlet-Cavrois, Thomas Caunes, Maxime Vaille, A. Samaras, Benjamin Renaud, Pierre Garcia, Christian Poivey, B. Vandevelde, Maryse Sauvagnac, Alexandre Rousset, Enoal Le Goulven, Marc Poizat, Christian Chatry, Ludovic Puybusque, Christian Erd, Yannick Padie, Jean Paul Abadi, Gael Vignon, Cesar Boatella-Polo
Publikováno v:
2013 IEEE Radiation Effects Data Workshop (REDW).
We present radiation test data on optocouplers from three different vendors including results on neutron (1MeV) and proton (30, 60, 190MeV) induced displacement damage, total ionizing dose (Co60) and proton induced Single Event Transients.