Study of the electrical behavior in Intermediate Band-Si junctions

Autor: R. García-Hernansanz, Javier Olea, Ignacio Mártil, A. del Prado, David Pastor, E. García-Hemme, L. González-Pariente, Germán González-Díaz

Publikováno v: Symposium E/H – Photovoltaic Technologies, Devices and Systems Based on Inorganic Materials, Small Organic Molecules and Hybrids | Symposium E/H – Photovoltaic Technologies, Devices and Systems Based on Inorganic Materials, Small Organic Molecules and Hybrids | 25/11/2012-30/11/2012 | Boston (MA), EEUU
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In this study we analyze the electrical behavior of a junction formed by an ultraheavily Ti implanted Si layer processed by a Pulsed Laser Melting (PLM) and the non implanted Si substrate. This electrical behavior exhibits an electrical decoupling ef

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::347b45aa9d6c1e82f3c4231d5c99b6e1
https://doi.org/10.1557/opl.2013.224