Zobrazeno 1 - 10
of 97
pro vyhledávání: '"L. Golonka"'
Autor:
J. Tremblay, H. Niculescu, E. Zwierkowska, L. Golonka, M. Jakobowski, Peter J. Gielisse, S. Achmatowicz
Publikováno v:
Journal of Wide Bandgap Materials. 8:261-275
The need for optimized thermal management in microelectronic devices derives from several sources, of which the ever-increasing miniaturization is only one. Power dissipation needs in certain designs are up to 40 W/cm/sup 2/, while 100 W/cm/sup 2/ is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5729dbcb51644330e436356bb539ce87
https://doi.org/10.1106/152451102024669
https://doi.org/10.1106/152451102024669
Autor:
Filip Bauwens, L. Golonka, F. De Pestel, Jaume Roig, Nick Martens, Hal Massie, Gary H. Loechelt, S. Mouhoubi
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
The power losses in System-in-Package (SiP) 12V-input DC/DC buck converters with advanced 30V Shield-Plate FETs (SP-FETs) are assessed by experiment and simulation with special interest in the body-diode contribution. Unlike previous work, rise/fall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b2167f1b0b1961e120442fae5b55f7c
https://doi.org/10.1109/ispsd.2012.6229080
https://doi.org/10.1109/ispsd.2012.6229080
Publikováno v:
International Journal of Electronics. 70:515-520
AC measurements of a model two-phase thick-film system in the Frequency range l0mHz to 10 MHz have been performed. The influence of manufacturing conditions (glass-to-bismuth ruthenate ratio and peak firing temperature) as well as the topology of tes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbc4c3a18a9fd430358aef8f8aa2452e
https://doi.org/10.1080/00207219108921303
https://doi.org/10.1080/00207219108921303
Publikováno v:
Proceedings of 2004 International Students and Young Scientists workshop Photonics and Microsystems, 2004..
LTCC (Low Temperature Cofired Ceramics) is widely used for background for optoelectronic devices. It allows to produce multilayer conductive paths, buried passive elements, as well as contacts (bumps) in one structure, which enlarges miniaturisation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce3b3d8809736cd7fad6f5967ebff314
https://doi.org/10.1109/stysw.2004.1459927
https://doi.org/10.1109/stysw.2004.1459927
Publikováno v:
Proceedings of 11th International Conference on Ion Implantation Technology.
Secondary Ion Mass Spectrometry (SIMS) has been used extensively to characterize dopant distribution in the semiconductor industry. In this work, we will demonstrate the applicability of SIMS for ion implantation dose measurement, implant energy and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd4e7cb50b73ae04bef96c475a4c605c
https://doi.org/10.1109/iit.1996.586190
https://doi.org/10.1109/iit.1996.586190
Publikováno v:
1997 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop ASMC 97 Proceedings.
This paper describes the implementation of in-situ doped WSi/sub x/ polycide into a manufacturing environment for high frequency communication applications. Process matching, process integration considerations, and statistical characterization of pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a493c293ee63c8adc215e8b044dc9f0
https://doi.org/10.1109/asmc.1997.630745
https://doi.org/10.1109/asmc.1997.630745
Publikováno v:
2000 Proceedings. 50th Electronic Components and Technology Conference (Cat. No.00CH37070).
The development of information technology has opened new perspectives in spreading scientific information and in education as well. Studying the curricula of other universities, paying virtual visits to laboratories and departments, taking courses, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46ba9b3029b395f14508216dc9c3d592
https://doi.org/10.1109/ectc.2000.853291
https://doi.org/10.1109/ectc.2000.853291
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