Zobrazeno 1 - 10
of 20
pro vyhledávání: '"L. Giguerre"'
Autor:
L. Giguerre, Thomas Hackbarth, Bernhard Holländer, St. Lenk, Frédéric Aniel, H.-J. Herzog, M. Enciso, U. Konig, K.-H. Hieber, H. von Känel, Siegfried Mantl
Publikováno v:
Solid-State Electronics. 48:1921-1925
Strained-Si based SiGe MODFETs on ultra-thin SiGe virtual substrates prepared by molecular beam epitaxy (MBE) and helium implantation are presented and compared to similar devices on thick, compositionally graded virtual substrates grown by low energ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53b233de0e3fa5265e9851ceb6bb36f7
https://doi.org/10.1016/j.sse.2004.05.037
https://doi.org/10.1016/j.sse.2004.05.037
Autor:
Frederic Monsieur, Denis Rideau, Sylvie Bruyere, Fabien Gilibert, L. Giguerre, Gilles Gouget, David Roy, Patrick Scheer
Publikováno v:
The European Physical Journal Applied Physics. 27:21-27
The increase of the gate leakage current of advanced CMOS technologies makes standard electrical characterization methods as C(V) measurement or charge pumping more complex and uncertain. In this paper, and based on C(V) characteristics, main element
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f93320f58e5ae38cdae72d4dab462bdd
https://doi.org/10.1051/epjap:2004072
https://doi.org/10.1051/epjap:2004072
Autor:
L. Giguerre, Thomas Hackbarth, U. Konig, M. Enciso, P. Crozat, Frédéric Aniel, S. Richard, N. Zerounian, J. H. Herzog, R. Adde
Publikováno v:
Applied Surface Science. 224:370-376
We present the state of the art of microwave performances of silicon heterostructures FETs (hetero-FETs). Recent advances are illustrated on using DaimlerChrysler (DC) technologies. fMAX as high as 188 and 135 GHz with minimum noise figure, NFmin as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a340dbbac18f20c6e7b19e844ab0e03
https://doi.org/10.1016/j.apsusc.2003.08.080
https://doi.org/10.1016/j.apsusc.2003.08.080
Autor:
Alexandre Dray, Andre Juge, Fabien Gilibert, M. Minondo, Gilles Gouget, Francois Agut, L. Giguerre, Denis Rideau
Publikováno v:
Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516).
We present measurements of GIDL at various temperatures and terminal biases. Besides band-to-band (BBT) tunneling leakage observed at high drain-to-gate voltage V/sub DG/, we also observed trap-assisted-tunneling (TAT) leakage currents at lower V/sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cf2de624b25c0334f29e2031bb5d5cc
https://doi.org/10.1109/icmts.2004.1309469
https://doi.org/10.1109/icmts.2004.1309469
Autor:
H.-J. Herzog, U. Konig, M. Encisco, Thomas Hackbarth, L. Giguerre, Frédéric Aniel, Bernhard Holländer, S. Mantl
Publikováno v:
International Semiconductor Device Research Symposium, 2003.
We report an investigation on self heating effects on SiGe based HFET for the first time. Si/SiGe n-HFETs exhibit excellent high frequency performance with f/sub T/ of 90 GHz (105 GHz), f/sub MAX/ of 188 GHz (225 GHz) at 300 K (50 K), low noise figur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d5eab2aa23572e736daeca8be169539
https://doi.org/10.1109/isdrs.2003.1272042
https://doi.org/10.1109/isdrs.2003.1272042
Autor:
B. Raynor, L. Giguerre, T. Mack, H.-J. Herzog, Frédéric Aniel, R. Adde, Ulrich Seiler, Paul Crozat, T. Hackbarth, M. Enciso-Aguilar, U. Konig
100 nm T-gate strained Si/Si 0.6 Ge 0.4 n-MODFETs have reached new record cut-off frequency f T of 74 GHz (105 GHz), with maximum oscillation frequency f max of 107 GHz (170 GHz) at temperatures 300 K (50 K). Moreover they show a low noise figure NF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0594fc1c454aecc6febbfa8f2ea66cd5
https://publica.fraunhofer.de/handle/publica/203231
https://publica.fraunhofer.de/handle/publica/203231
Autor:
B. Raynor, T. Hackbarth, Paul Crozat, Frédéric Aniel, R. Adde, T. Mack, M. Enciso-Aguilar, Ulrich Seiler, L. Giguerre
Publikováno v:
2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497).
100 nm T-gate Si/SiGe n-MODFETs are reported with new record f/sub T/ of 76 GHz (105 GHz), and with f/sub MAX/ of 107 GHz (170 GHz) at temperatures 300 K (50 K), low noise figure NF/sub min/ of 0.4 dB at 2.5 GHz and 300 K. Dependence on biases and te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6fbdb388129f9951c2b54c14e05e923
https://doi.org/10.1109/isdrs.2001.984551
https://doi.org/10.1109/isdrs.2001.984551
Autor:
R. Adde, M. Abboun, Frédéric Aniel, L. Giguerre, Nicolas Zerounian, A. Dubois, Agnieszka Konczykowska, Muriel Riet, Sylvain Blayac
Publikováno v:
32nd European Solid-State Device Research Conference.
Self heating is investigated in InP/InGaAs DHBT’s, a transistor technology well suited for 40 Gb/s IC’s. An original approach associates experiments andsimulations. InP DHBT’s are shown to heat up even if their I-V characteristics do not presen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2098665e8c58c09c4ca358e63332cef
https://doi.org/10.1109/essderc.2002.194910
https://doi.org/10.1109/essderc.2002.194910
Publikováno v:
31st European Solid-State Device Research Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::016235f3a75bdaeb0a61f35b4d2ee767
https://doi.org/10.1109/essderc.2001.195296
https://doi.org/10.1109/essderc.2001.195296
Autor:
G. Höck, Frédéric Aniel, Paul Crozat, U. Konig, M. Zeuner, M. Enciso-Aguilar, Nicolas Zerounian, L. Giguerre, Thomas Hackbarth, H.-J. Herzog, R. Adde
Publikováno v:
Scopus-Elsevier
Better transport properties and band gap engineering give a growing importance to SiGe alloy technologies in microelectronics. Transport properties, performances and potential of SiGe hetero FETs at cryogenic temperatures are reviewed focussing on IF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::beecb9e99d24942434e2147800b5cdce
http://www.scopus.com/inward/record.url?eid=2-s2.0-0036564045&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0036564045&partnerID=MN8TOARS