Zobrazeno 1 - 6
of 6
pro vyhledávání: '"L. G. Terng"'
Autor:
Martin Jacobus Johan Jak, Andreas Fuchs, Kevin Cheng, Grzegorz Grzela, L. G. Terng, Wilson Tzeng, Christophe Fouquet, Marc Noot, Guo-Tsai Huang, Ken Chang, Y. C. Wang, Eason Su, Omer Adam, Arie Jeffrey Den Boef, Chih-Ming Ke, Kai-Hsiung Chen, Cathy Wang, Sax Liao, Vincent Couraudon, Kaustuve Bhattacharyya
Publikováno v:
SPIE Proceedings.
The optical coupling between gratings in diffraction-based overlay triggers a swing-curve1,6 like response of the target’s signal contrast and overlay sensitivity through measurement wavelengths and polarizations. This means there are distinct meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a3ddbb2f8940f861ad1198f216fa88b
https://doi.org/10.1117/12.2257662
https://doi.org/10.1117/12.2257662
Autor:
Jon Wu, Christophe Fouquet, Guo-Tsai Huang, T. S. Gau, Henk-Jan H. Smilde, Stephen P. Morgan, Maurits van der Schaar, Y. C. Ku, Cathy Wang, Miranda Un, Murat Bozkurt, Andreas Fuchs, Kai-Hsiung Chen, Steffen Meyer, Vincent Tsai, Kaustuve Bhattacharyya, Martin Jacobus Johan Jak, Peter Ten Berge, Michael Kubis, L. G. Terng, Mark van Schijndel, David Hwang, Chih-Ming Ke, Arie Jeffrey Den Boef, Frida Liang, Kevin Cheng
Publikováno v:
SPIE Proceedings.
Aggressive on-product overlay requirements in advanced nodes are setting a superior challenge for the semiconductor industry. This forces the industry to look beyond the traditional way-of-working and invest in several new technologies. Integrated me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e0a8bd347e041751b5b3f6cdef44fa7
https://doi.org/10.1117/12.2011878
https://doi.org/10.1117/12.2011878
Autor:
Guo-Tsai Huang, Noelle Wright, Spencer Lin, L. G. Terng, Wei-Shun Tzeng, Jon Wu, Li-Jui Chen, Mir Shahrjerdy, C. R. Liang, Sophie Peng, Cathy Wang, Gavin Liu, Omer Adam, Willie Wang, Chih-Ming Ke, T. S. Gau, Vivien Wang, Victor Shih, W. T. Yang, Jacky Huang, Sophia Wang, Kaustuve Bhattacharyya, Maurits van der Schaar, Andreas Fuchs, John Lin, H. J. Lee, Heng-Hsin Liu, Marc Noot, Jim Chen
Publikováno v:
SPIE Proceedings.
Advanced lithography is becoming increasingly demanding when speed and sophistication in communication between litho and metrology (feedback control) are most crucial. Overall requirements are so extreme that all measures must be taken in order to me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::705163b9d6ce68c2eeef8c70cc58b6a9
https://doi.org/10.1117/12.853318
https://doi.org/10.1117/12.853318
Autor:
Sophia Wang, Alan Ho, Guo-Tsai Huang, Cathy Wang, Jon Wu, Vivien Wang, L. G. Terng, Willie Wang, Victor Shih, Noelle Wright, Spencer Lin, W. T. Yang, Mir Shahrjerdy, John Lin, Jacky Huang, Karel van der Mast, Omer Adam, Chih-Ming Ke, H. J. Lee, Dennis Chang, H. H. Liu, C. R. Liang, H. L. Chung, T. S. Gau, Maurits van der Schaar, Li-Jui Chen, Sophie Peng, Kaustuve Bhattacharyya, Andreas Fuchs
Publikováno v:
SPIE Proceedings.
ASML Advanced lithography is becoming increasingly demanding when speed and sophistication in communication between litho and metrology (feedback control) are most crucial. Overall requirements are so extreme that all measures must be taken in order
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf9354fdc632039118e4ca608acb0571
https://doi.org/10.1117/12.837353
https://doi.org/10.1117/12.837353
Publikováno v:
SPIE Proceedings.
Processing two consequent layers on the same exposure tool had long time been considered to be the terminated solution for overlay control by photolithography process engineers. Such measure would take advantage of excluding Lens distortion contribut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83e5ca1b056abd0181220ca12832e4da
https://doi.org/10.1117/12.410069
https://doi.org/10.1117/12.410069
Publikováno v:
SPIE Proceedings.
Three types of photo developing and developing-like defect on DUV process were presented in this paper. Scumming of photoresist on nitride film during developing process which was resulted from interaction between by-product of nitride film depositio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::743d35b2e7f6f50a01b6e273753c276f
https://doi.org/10.1117/12.410099
https://doi.org/10.1117/12.410099