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Autor:
L. G. Lavrent'yeva, M. D. Vilisova, B. Bobrovnikova, S. V. Subach, V. V. Preobrazhenskii, B. R. Semyagin, I. V. Ivonin, Mikhail A. Putyato
Publikováno v:
Russian Physics Journal. 43:816-820
InGaAs layers grown by low-temperature molecular-beam epitaxy on InP substrates at variable flow ratios between elements of groups III and V are investigated. Layers with a defect structure and low electrophysical parameters are shown to grow with an