Zobrazeno 1 - 10
of 65
pro vyhledávání: '"L. G. Lavrent'eva"'
Autor:
M. D. Vilisova, L. G. Lavrent'eva, I. A. Bobrovnikova, S. V. Subach, V. V. Preobrazhenskii, I. V. Ivonin, S. E. Toropov, B. R. Semyagin, Mikhail A. Putyato
Publikováno v:
Semiconductors. 37:1047-1052
The effect of dopant concentration and growth-surface crystallographic orientation on the incorporation of Si into Ga and As sublattices was investigated during GaAs molecular-beam epitaxy. The epitaxial layers (epilayers) were grown on GaAs substrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbbe9f590aa0cb0d1979e4e2d76919b3
https://doi.org/10.1134/1.1610116
https://doi.org/10.1134/1.1610116
Autor:
V. V. Preobrazhenskii, M. D. Vilisova, S. E. Toropov, L. G. Lavrent'eva, A. E. Kunitsyn, Mikhail A. Putyato, B. R. Semyagin, V. V. Chaldyshev
Publikováno v:
Semiconductors. 36:953-957
Using the methods of X-ray diffraction, optical absorption in the near-infrared range, and the Hall effect, the influence of growth conditions on the structure and properties of Si-doped GaAs layers grown by low-temperature molecular-beam epitaxy was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79b86fe34e8a028d819e7ea7b29f9039
https://doi.org/10.1134/1.1507270
https://doi.org/10.1134/1.1507270
Publikováno v:
Crystallography Reports. 47:S118-S127
A nontraditional approach to the control of GaAs properties via the introduction of an excessive amount of arsenic during growth of epitaxial layers under conditions of low-temperature molecular-beam epitaxy (LT-GaAs layers) is considered. The influe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38bc2faf60840789c5da3a108909b53c
https://doi.org/10.1134/1.1529966
https://doi.org/10.1134/1.1529966
Publikováno v:
Russian Physics Journal. 45:735-752
The present paper reviews works devoted to control over the properties of epitaxial GaAs by incorporation of excess (non-stoichiometric) arsenic into the GaAs films grown by molecular-beam epitaxy (MBE) at low-temperature (LT). The effect of excess a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c37be85efc6de8efaba03f6e6491b5f7
https://doi.org/10.1023/a:1021965211576
https://doi.org/10.1023/a:1021965211576
Publikováno v:
Russian Physics Journal. 45:493-497
Experimental proofs of asymmetric trapping of atoms at the growth step in vapor-phase epitaxy of gallium arsenide in the GaAs–AsCl3–H2 system are given. The data obtained confirm the important role of the surface diffusion mass transfer in the gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e7dc267be002635b9c3b36e1b5ffbe6
https://doi.org/10.1023/a:1021088522941
https://doi.org/10.1023/a:1021088522941
Autor:
M. D. Vilisova, S. E. Toropov, S. V. Subach, L. G. Lavrent'eva, B. R. Semyagin, V. V. Preobrazhenskii, I. A. Bobrovnikova, I. V. Ivonin, M. A. Putyato
Publikováno v:
Russian Physics Journal. 45:414-418
The influence of crystallographic orientation of the growth surface near (100) and (111)A GaAs singular faces on the silicon capture into A- and B-sublattices of gallium arsenide in molecular beam epitaxy is investigated by the electrophysical and ph
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::468ad1b29004aa708651ca69e4d50443
https://doi.org/10.1023/a:1020543427057
https://doi.org/10.1023/a:1020543427057
Publikováno v:
Russian Physics Journal. 45:997-1000
The effect of the arsenic concentration in the vapor phase on the growth step distribution over the surface of GaAs epitaxial layers grown in a chlorine-hydride vapor-transport system on substrates with 4° (111)A and (113)A orientations is studied.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7659c324a8d59ac649e441bdb4e33bc
https://doi.org/10.1023/a:1022815017262
https://doi.org/10.1023/a:1022815017262
Publikováno v:
Russian Physics Journal. 45:638-642
The influence of concentrations of vapor-phase growth components on the structure of singular, vicinal, and nonsingular growth surfaces of InAs epitaxial layers grown in the In–AsCl3–H2 system is investigated by the methods of electron microscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81466355ff25ba1025af80a694fcc721
https://doi.org/10.1023/a:1021115906200
https://doi.org/10.1023/a:1021115906200
Autor:
S. V. Subach, M. D. Vilisova, I. T. Shulepov, T. V. Korableva, V. S. Lukash, L. G. Lavrent'eva, I. V. Ivonin, M. P. Yakubenya
Publikováno v:
Russian Physics Journal. 42:17-21
It is known that during gas-phase epitaxy of InP and GaAs the region of the film close to the heteroboundary is formed with altered phase, structural, and electrophysical properties. The main cause for this is formation of a transition layer due to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce1693484f18700083cee0ae135e71a0
https://doi.org/10.1007/bf02508239
https://doi.org/10.1007/bf02508239
Autor:
S. V. Subach, E. V. Chernikov, V. S. Lukash, I. V. Ivonin, A. N. Tarzimyanov, L. G. Lavrent'eva
Publikováno v:
Russian Physics Journal. 39:571-575
The initial stages in the growth of indium phosphide films on gallium arsenide substrates in a chloride gastransport system are investigated by transmission electron microscopy and electron-diffraction and secondaryion mass spectrometry techniques. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27cceb031e7c5fe524504f247edd4dc6
https://doi.org/10.1007/bf02437023
https://doi.org/10.1007/bf02437023