Zobrazeno 1 - 10
of 13
pro vyhledávání: '"L. G. Il'chenko"'
Autor:
A. E. Lushkin, Tomasz Debski, Ivo W. Rangelow, I. I. Bekh, Piotr Grabiec, Peter Hudek, L. G. Il’chenko, Steffen Biehl, Ivan Kostic, Stanislaw Mitura, V. V. Il’chenko, Wolfgang Barth
Publikováno v:
Scopus-Elsevier
The successful fabrication of field emission (FE) devices is directly related to process simplicity and device performance, which depends to a large extent on the tip material and emitter geometry. On the other hand, these characteristics are the mos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa18a4dac5a50039f0f7cc4961b326cd
https://doi.org/10.1016/s0167-9317(01)00557-3
https://doi.org/10.1016/s0167-9317(01)00557-3
Publikováno v:
SPIE Proceedings.
E cient engineering of metamaterials involves modeling of electric eld pro les around these structures. Realisticmodeling of the electric eld in metamaterials requires accurate knowledge of optical constants of the compo-nents for which traditionally
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47fe3ee813fa5b0eee3fbda81339d26a
https://doi.org/10.1117/12.2025122
https://doi.org/10.1117/12.2025122
Publikováno v:
Physics, Chemistry and Applications of Nanostructures.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2d142aaadcc73032ee9d0aa4e498d51
https://doi.org/10.1142/9789814343909_0013
https://doi.org/10.1142/9789814343909_0013
Publikováno v:
Reaction Kinetics & Catalysis Letters. 50:363-369
The theoretical results obtained are suitable for comparative analysis of electric activity of dielectric materials in vacuum. Their volume properties and charge in the surface (uncompensated ones or the presence of regular active lattice centers, et
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::695641e1e00aec624f13dbf6327f1765
https://doi.org/10.1007/bf02062237
https://doi.org/10.1007/bf02062237
Publikováno v:
Journal of Micromechanics and Microengineering. 3:74-80
A calculation of the potential barrier shape at the metal-vacuum interface was carried out taking into account the effects of the spatial dispersion and dynamic corrections to the image force potential. The calculations were carried out using the ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e219cf654f846fc9e32a488e4851f84a
https://doi.org/10.1088/0960-1317/3/2/007
https://doi.org/10.1088/0960-1317/3/2/007
Publikováno v:
Nanomaterials and Supramolecular Structures ISBN: 9789048123087
The structural and total interaction potentials of the vacuum space between two dielectric quartz crystal slabs of symmetric volume features but asymmetric surface features were calculated with Green’s function applied to the non-local Poisson equa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6910b4566673badcc04603cd0504e3d
https://doi.org/10.1007/978-90-481-2309-4_2
https://doi.org/10.1007/978-90-481-2309-4_2
Publikováno v:
2005 International Vacuum Nanoelectronics Conference.
The structured component DeltaVst(roarr) of the full potential formed between two dielectrics (semiconductors) in a small vacuum interval is calculated theoretically. The analytical expressions for DeltaVst(roarr) in the vacuum gap is calculated, usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02d0a29a025dfca9d69197ff013558b1
https://doi.org/10.1109/ivnc.2005.1619555
https://doi.org/10.1109/ivnc.2005.1619555
Publikováno v:
MicroNano Integration ISBN: 9783642622656
A very promising way in solid-state gas and bio-sensors creation is the use of well developed silicon technology for the manufacturing of the gas sensors. It will allow to unify the processes of the sensor production with the processes of the manufac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::238a485c9d285e70e569922bd5f86921
https://doi.org/10.1007/978-3-642-18727-8_11
https://doi.org/10.1007/978-3-642-18727-8_11
Autor:
A. M. Gaskov, V. T. Grinchenko, V. M. Telega, A. I. Kravchenko, V. V. Il’chenko, V. P. Chehun, L. G. Il’chenko
Publikováno v:
MicroNano Integration ISBN: 9783642622656
Heterostructures based on the nanometer-scaled semiconductor oxides can be used as gas-sensitive receptor and transducer systems. In comparison to resistive oxide sensors, having a linear current - voltage characteristics, the sensors based on the he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d180b68940cc716dc63a02b2918dcf68
https://doi.org/10.1007/978-3-642-18727-8_12
https://doi.org/10.1007/978-3-642-18727-8_12
Autor:
K. Studzińska, W. Barth, Ivo W. Rangelow, Ivan Kostic, T. Iwert, S. Mitura, P. Hudek, F. Shi, T. Debski, L. G. Il’chenko, I. I. Bekh, Piotr Grabiec, A. E. Lushkin, Steffen Biehl, V. V. Il’chenko, G. Haindl
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 18:3544
An electron emission behavior of field emission arrays based on a new bulk/surface silicon micromachining method of fabrication was studied. The process developed is simple and allows self-aligned gate electrode formation. The field emission of the e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62200a3934dc45be1a64fe5caa359d70
https://doi.org/10.1116/1.1324648
https://doi.org/10.1116/1.1324648