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pro vyhledávání: '"L. F. Luis-Pineda"'
Autor:
M. A. Enciso Aguilar, Frédéric Aniel, Eloy Ramirez-Garcia, Nicolas Zerounian, L. F. Luis-Pineda
Publikováno v:
CCE
This paper introduces some results concerning the high frequency noise analysis, along with the noise transport time (r) extraction and its impact over the microwave noise performances of SiGe heterojunction bipolar transistors (HBT). Our methodology
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5aa1f23b5b686c4919dbf43b2c4c9cb
https://doi.org/10.1109/iceee.2012.6421151
https://doi.org/10.1109/iceee.2012.6421151
