Zobrazeno 1 - 10
of 54
pro vyhledávání: '"L. F. Eastman"'
Publikováno v:
International Journal of Electronics. 87:497-510
The feasibility of GaAlAs/GaAs heterojunction bipolar transistors as power output transistors for 24–28V cellular base station applications was studied. A 1W, 25V test vehicle was fabricated, with predictable and uniform electrical parameters. Maxi
Publikováno v:
Physical Review B. 54:16381-16384
We report a synchrotron x-ray-diffraction study of the strain field in embedded In0.2Ga0.8As/GaAs ~001! quantum wires of widths 50‐250 nm. Our results show a size-dependent orthorhombic lattice deformation in the wires and a linearly strained inter
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 1:316-330
Effective nonlinear gain coefficients due to the effects of carrier diffusion, capture, and escape are derived from the carrier transport equations. The quantum capture and escape processes between the confined states and the unconfined states are ca
Publikováno v:
Journal of Applied Physics. 76:5334-5338
Carrier energy relaxation rates via carrier‐polar optical‐phonon interactions with hot phonon effects are theoretically studied in multisubband quantum well structures. The effects of changing the width and depth of quantum wells on the carrier e
Publikováno v:
Journal of Applied Physics. 75:4731-4736
A long‐wavelength λc=18 μm infrared hot‐electron transistor (IHET) with low dark current is demonstrated. In order to achieve long‐wavelength absorption, a low barrier height is required, which in turn results in a large dark current. Therefo
Publikováno v:
Journal of Applied Physics. 72:1539-1542
We theoretically investigate the effects of strain on normal incidence hole intersubband absorption in p‐type semiconductor quantum well. We found that for the normal incident light the most prominent transition probability and absorption coefficie
Publikováno v:
Applied Physics Letters. 66:90-92
We have designed and demonstrated a narrow bandpass filter, which is composed of a double‐barrier structure, for an infrared hot‐electron transistor with a cutoff wavelength at 14 μm. The filter is capable of suppressing the low energy thermally
Publikováno v:
IEEE Photonics Technology Letters. 6:1088-1090
Carrier capture and escape processes between quantum wells and barriers via carrier-polar optical phonon interactions are theoretically studied in multisubband quantum well structures. We find that carriers in each subband have their own minimum capt