Zobrazeno 1 - 10
of 54
pro vyhledávání: '"L. F. EASTMAN"'
Publikováno v:
International Journal of Electronics. 87:497-510
The feasibility of GaAlAs/GaAs heterojunction bipolar transistors as power output transistors for 24–28V cellular base station applications was studied. A 1W, 25V test vehicle was fabricated, with predictable and uniform electrical parameters. Maxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ca6713a76b26d8a15f2c148212cc742
https://doi.org/10.1080/002072100132147
https://doi.org/10.1080/002072100132147
Publikováno v:
Physical Review B. 54:16381-16384
We report a synchrotron x-ray-diffraction study of the strain field in embedded In0.2Ga0.8As/GaAs ~001! quantum wires of widths 50‐250 nm. Our results show a size-dependent orthorhombic lattice deformation in the wires and a linearly strained inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2e64a481f86fcbaec18f3c1cd382311a
https://doi.org/10.1103/physrevb.54.16381
https://doi.org/10.1103/physrevb.54.16381
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 1:316-330
Effective nonlinear gain coefficients due to the effects of carrier diffusion, capture, and escape are derived from the carrier transport equations. The quantum capture and escape processes between the confined states and the unconfined states are ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8958186ee3ceda83c11ef0a12cce3ed8
https://doi.org/10.1109/2944.401211
https://doi.org/10.1109/2944.401211
Publikováno v:
Journal of Applied Physics. 76:5334-5338
Carrier energy relaxation rates via carrier‐polar optical‐phonon interactions with hot phonon effects are theoretically studied in multisubband quantum well structures. The effects of changing the width and depth of quantum wells on the carrier e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef81d015592599284f4da458b07aea76
https://doi.org/10.1063/1.357185
https://doi.org/10.1063/1.357185
Publikováno v:
Journal of Applied Physics. 75:4731-4736
A long‐wavelength λc=18 μm infrared hot‐electron transistor (IHET) with low dark current is demonstrated. In order to achieve long‐wavelength absorption, a low barrier height is required, which in turn results in a large dark current. Therefo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20970426daf805766c001e3d9e969a48
https://doi.org/10.1063/1.355927
https://doi.org/10.1063/1.355927
Publikováno v:
Journal of Applied Physics. 72:1539-1542
We theoretically investigate the effects of strain on normal incidence hole intersubband absorption in p‐type semiconductor quantum well. We found that for the normal incident light the most prominent transition probability and absorption coefficie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aed513b39fb4c5853e3b5b47a255a87a
https://doi.org/10.1063/1.351722
https://doi.org/10.1063/1.351722
Publikováno v:
Applied Physics Letters. 66:90-92
We have designed and demonstrated a narrow bandpass filter, which is composed of a double‐barrier structure, for an infrared hot‐electron transistor with a cutoff wavelength at 14 μm. The filter is capable of suppressing the low energy thermally
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0ede6cd3bf984a08c02db5b781f40a6
https://doi.org/10.1063/1.114156
https://doi.org/10.1063/1.114156
Publikováno v:
IEEE Photonics Technology Letters. 6:1088-1090
Carrier capture and escape processes between quantum wells and barriers via carrier-polar optical phonon interactions are theoretically studied in multisubband quantum well structures. We find that carriers in each subband have their own minimum capt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a92bf089d037d42960ef5f9690bce8d
https://doi.org/10.1109/68.324677
https://doi.org/10.1109/68.324677