Impact of the Frequency Dependence of the Parasitic Admittance on the Diffusion Noise of a Diode Junction at Low Bias

Autor: L. Escotte, Jean-Guy Tartarin, J. Graffeuil

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (12), pp.5289-5294. ⟨10.1109/TED.2019.2947693⟩
IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5289-5294. ⟨10.1109/TED.2019.2947693⟩

International audience; In this article, we report for the first time that the well-established diffusion noise can be apparently increased in large proportions and that such a situation can be very common at some specific frequencies in the p-n junc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b80f30f91978f9f0795a97b0b1803aea
https://hal.archives-ouvertes.fr/hal-02388640/file/TED-ACCEPTED-FINAL_HAL.pdf

Broadband Frequency Dispersion Small-Signal Modeling of the Output Conductance and Transconductance in AlInN/GaN HEMTs

Autor: Jean-Guy Tartarin, Sylvain Delage, S. D. Nsele, Stéphane Piotrowicz, L. Escotte

Publikováno v: IEEE Transactions on Electron Devices. 60:1372-1378

Frequency dispersion of transconductance and output conductance in AlInN/GaN high electron mobility transistors is investigated in this paper. Broadband dispersion effects in the microwave frequency range are reported for the first time. A small-sign

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3aa90f3ed84e192b1d02bdbf2901e26e
https://doi.org/10.1109/ted.2013.2248158

L-band radiometer design for long-term stability measurement of one-port devices

Autor: L. Escotte, Emilie Leynia de la Jarrige, Jean-Marc Goutoule, Eric Gonneau

Publikováno v: International Journal of Microwave and Wireless Technologies. 4:119-126

The design of a high-stability radiometer is presented in this paper. It is used to characterize the stability of a microwave active cold load at L-band. The two-load radiometer takes advantage of a noise injection technique to improve its sensitivit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::95ab35c35f4de2e369bf2742a83ea1bd
https://doi.org/10.1017/s1759078711000997

Long-term reliability of silicon bipolar transistors subjected to low constraints

Autor: L. Escotte, Guy Perez, Philippe Perdu, A. Crosson, L. Crétinon, D. Talbourdet, Marise Bafleur

Publikováno v: Microelectronics Reliability. 47:1590-1594

We present in this study the effect of electrical ageing on silicon (Si) NPN bipolar transistors. This study is based on a sample of half-hundred components, which have been fabricated in the early 1980s, which represents an exceptional experience fe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::519f19f0cda280c6f171cd889fc2ca59
https://doi.org/10.1016/j.microrel.2007.07.057

InAlN/GaN HEMT technology for robust HF receivers: An overview of the HF and LF noise performances

Autor: Jean-Guy Tartarin, L. Escotte, Stéphane Piotrowicz, S. D. Nsele, Sylvain Delage

Publikováno v: International Conference on Noise and Fluctuations
International Conference on Noise and Fluctuations, Jun 2015, X'IAN, China. ⟨10.1109/ICNF.2015.7288538⟩

International audience; From the first developments of Nitride technologies using AlGaN/GaN heterostructures for designing high power, high frequency HEMT devices, we now assist to the emergence of new declination with InAlN/GaN heterostructures. Con

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03aa33df15467d8447e01ebc56823ec3
https://hal.science/hal-01234023/document