Zobrazeno 1 - 10
of 108
pro vyhledávání: '"L. Eckey"'
Autor:
Bruno K. Meyer, Axel Hoffmann, Mervine Rosen, Anna V. Rodina, Al. L. Efros, M. Dietrich, L. Eckey, A. Göldner
Publikováno v:
physica status solidi (b). 216:21-26
Results of theoretical and experimental magneto-optical studies of free excitons in wurtzite GaN are presented. The direct photoluminescence from free exciton states of high-quality GaN epilayers was studied by polarization-dependent magneto-optical
Autor:
Q. K. K. Liu, Juergen Christen, H. Siegle, L. Eckey, Axel Hoffmann, A. Kaschner, Frank Bertram
Publikováno v:
Acta Physica Polonica A. 94:125-137
Publikováno v:
Journal of Crystal Growth. :639-643
We study the free exciton fine structure and the contribution of propagating excitations in the lower-polariton and upper-polariton branches (LPB and UPB) in the 2 K fluorescence spectrum of GaN on Al 2 O 3 . The latter e⁄ect is observed for both A
Autor:
Ary A. Hoffmann, J. Holst, R. Beccard, Bernd Schineller, O. Schön, L. Eckey, Michael Heuken, K. Heime, U. von Gfug
Publikováno v:
Journal of Crystal Growth. :523-527
The compensation of Mg-doped GaN is systematically studied by low-temperature photoluminescence (PL) using a series of samples with different Mg concentrations. Strongly doped samples are found to be highly compensated in electrical measurements. The
Autor:
L. Eckey, Andreas Hoffmann
Publikováno v:
Materials Science Forum. :1259-1264
Autor:
Nikolai N. Ledentsov, J. Holst, W. V. Lundin, A. Göldner, Mikhail V. Maximov, B. V. Pushnyi, L. Eckey, Zh. I. Alferov, Frank Bertram, D. Rudloff, A. V. Sakharov, Andreas Hoffmann, Juergen Christen, Thomas Hempel, A. S. Usikov, M. Straßburg
Publikováno v:
Materials Science Forum. :1291-1294
Autor:
Frank Bertram, Kazumasa Hiramatsu, Christian Thomsen, H. Siegle, Axel Hoffmann, Jürgen Christen, D. Schmidt, L. Eckey
Publikováno v:
Materials Science and Engineering: B. 50:192-196
We performed spatially-resolved investigations on thick GaN layers using cathodoluminescence and micro-Raman experiments. Our measurements reveal that the peak position of the excitonic transition lines strongly depends on the distance to the substra
Autor:
Bruno K. Meyer, K. Pressel, I. Broser, P. Thurian, P. Maxim, L. Eckey, R. Heitz, Ary A. Hoffmann
Publikováno v:
Physical Review B. 55:4382-4387
We report a comprehensive photoluminescence excitation (PLE) investigation of the deep iron acceptor in hexagonal GaN. PLE spectra of the ${\mathrm{Fe}}^{3+}$ ${[}^{4}$ ${\mathrm{T}}_{1}$ (G)${\mathrm{\ensuremath{-}}}^{6}$ ${\mathrm{A}}_{1}$ (S)] lum
Autor:
R. Heitz, A. E. Zhukov, Zh. I. Alferov, L. Eckey, Marius Grundmann, A. Yu. Egorov, M. Veit, Dieter Bimberg, N. N. Ledentsov, P. S. Kop’ev, V. M. Ustinov
Publikováno v:
Surface Science. :770-773
We report on optical studies of relaxation processes in self-organized InAs/GaAs quantum dots (QDs). Photoluminescence excitation spectra reveal a series of almost equidistant lines. Their energy with respect to the detection energy does not depend o
Autor:
Axel Hoffmann, Bruno K. Meyer, Isamu Akasaki, M. Ben-Chorin, L. Eckey, Dmitri Kovalev, Hiroshi Amano, Theeradetch Detchprohm, D. Volm, T. Streibl, Kazumasa Hiramatsu, Jacek A. Majewski, K. Oettinger, J. Diener
Publikováno v:
Scopus-Elsevier
We report on photoluminescence experiments on hexagonal GaN epitaxial films grown by hydride and organometallic vapor phase epitaxy on sapphire and 6H-SiC. At low temperatures we observe free and bound exciton recombinations, which allow us to establ