Zobrazeno 1 - 10
of 11
pro vyhledávání: '"L. E. Klyachkin"'
Autor:
R. V. Li, N. N. Potrakhov, A. A. Ukhov, S. V. Shapovalov, L. E. Klyachkin, N. T. Bagraev, A. M. Malyarenko, V. A. Mazurok
Publikováno v:
Biomedical Engineering. 56:378-383
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32a1efac44b012aebf5c89e405798a52
https://doi.org/10.1007/s10527-023-10240-8
https://doi.org/10.1007/s10527-023-10240-8
Publikováno v:
Journal of Physics: Conference Series. 1410:012234
Here we present the first findings on the resonance response of DNA oligonucleotides deposited on silicon nanosandwich (SNS) and living bio-tissue to the THz irradiation that allow their identification by measuring the change of the longitudinal cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c064f3be076fffac70318f28fe6f30e
https://doi.org/10.1088/1742-6596/1410/1/012234
https://doi.org/10.1088/1742-6596/1410/1/012234
Publikováno v:
Journal of Physics: Conference Series. 1326:012005
The experimental data of the optical and electric features of the silicon nanosandwiches obtained by silicon planar technology in the frameworks of the Hall geometry are presented. Silicon nanosandwiches represent the ultra-shallow silicon quantum we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43f210fdac479bb3d620777d8de521a0
https://doi.org/10.1088/1742-6596/1326/1/012005
https://doi.org/10.1088/1742-6596/1326/1/012005
Publikováno v:
Semiconductors. 46:275-288
The circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) confined by {\delta}-barriers heavily doped with boron, 5 10^21 cm^-3, is under study as a function of temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::341bf9017d70e755397b157bd2887cc7
https://doi.org/10.1134/s1063782612030049
https://doi.org/10.1134/s1063782612030049
Autor:
I.I. Markov, Wolfgang Gehlhoff, N. T. Bagraev, L. E. Klyachkin, E. I. Chaikina, A. M. Malyarenko
Publikováno v:
Solid-State Electronics. 42:1199-1204
Studies of infrared induced emission from the silicon quantum wires, which is due to the formation of a correlation gap in the DOS of degenerate hole gas, are presented. The quantum wires of this art are created by electrostatic confining potential i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0110168edccc47c145a55547eee9826b
https://doi.org/10.1016/s0038-1101(98)00004-5
https://doi.org/10.1016/s0038-1101(98)00004-5
Autor:
N. T. Bagraev, N. G. Galkin, W. Gehlhoff, L. E. Klyachkin, A. M. Malyarenko, I. A. Shelykh, Marília Caldas, Nelson Studart
Publikováno v:
AIP Conference Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6af880c1487132c49472ba9d55a5cbf9
https://doi.org/10.1063/1.3295503
https://doi.org/10.1063/1.3295503
Autor:
N. T. Bagraev, W. Gehlhoff, L. E. Klyachkin, A. A. Kudryavtsev, A. M. Malyarenko, V. V. Romanov, Marília Caldas, Nelson Studart
Publikováno v:
AIP Conference Proceedings.
We present the findings of spin‐dependent single‐hole and pair‐hole transport across the p‐type high mobility silicon quantum well (Si‐QW) confined by the superconductor delta‐barriers on the n‐type Si (100) surface. The oscillations of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65a75805a11f3e9113826e98ed0d831a
https://doi.org/10.1063/1.3295489
https://doi.org/10.1063/1.3295489
Publikováno v:
Semiconductor Science and Technology. 6:577-581
Non-equilibrium impurity diffusion of dopants has been realized in monocrystalline silicon through controlled surface injection of self-interstitials and vacancies. By varying the parameters of the surface oxide layer during the boron/phosphorus diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50b1890c119f71cbf9c87a6ae8a0d0f3
https://doi.org/10.1088/0268-1242/6/7/002
https://doi.org/10.1088/0268-1242/6/7/002
Publikováno v:
Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::628879bba1b2560b2904f6c3983fd4c9
https://doi.org/10.7567/ssdm.1994.pd-4-7
https://doi.org/10.7567/ssdm.1994.pd-4-7
Publikováno v:
Extended Abstracts of the 1994 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5100d773f5deb968603e84cf8f4b7231
https://doi.org/10.7567/ssdm.1994.a-4-5
https://doi.org/10.7567/ssdm.1994.a-4-5