Zobrazeno 1 - 6
of 6
pro vyhledávání: '"L. E. Hintzsche"'
Autor:
Martijn Marsman, M. W. P. E. Lamers, Changming Fang, L. E. Hintzsche, Georg Kresse, A. W. Weeber
Publikováno v:
Physical Review Applied. 3
A positive fixed charge at the interface between crystalline silicon and amorphous silicon nitride attracts electrons and repels holes. Although this phenomenon is extensively exploited in high-efficiency solar cells, its atomic-scale origin is not p
Autor:
Arthur Weeber, Georg Kresse, Changming Fang, M.W.P.E. Lamers, G. Jordan, Martijn Marsman, L. E. Hintzsche
Publikováno v:
Physical Review B. 88
We present an ab initio density functional theory study of the dominant defects in hydrogenated amorphous silicon nitrides covering different stoichiometries, the influence of hydrogen, and the influence of the annealing history. Whereas nitrogen (N)
Autor:
T. Watts, Changming Fang, G. Jordan, L. E. Hintzsche, Martijn Marsman, Georg Kresse, Arthur Weeber, M.W.P.E. Lamers
Publikováno v:
Physical Review B. 86
We present ab initio density functional theory studies for stoichiometric as well as nonstoichiometric amorphous silicon nitride, varying the stoichiometry between Si${}_{3}$N${}_{4.5}$ and Si${}_{3}$N${}_{3}$. Stoichiometric amorphous Si${}_{3}$N${}
Publikováno v:
Physical Review B. 85
We present a scheme to construct charge densities for non-self-consistent density functional theory calculations. Effects of charge transfer are added onto the density of overlapping atomic charge densities by means of charge-neutral spherical atom-c
Publikováno v:
Physical Review B. 85
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