Zobrazeno 1 - 10
of 18
pro vyhledávání: '"L. E. Guevara-Macías"'
Autor:
L. E. Guevara-Macías, A. Lastras-Martínez, J. Ortega-Gallegos, L. F. Lastras-Martínez, R. E. López-Estopier, D. Ariza-Flores, R. Castro-García, J.G. Santiago García, R. E. Balderas-Navarro
Publikováno v:
Journal of Crystal Growth. 515:9-15
We report on a computer algorithm for the in situ analysis of reflectance anisotropy (RA) spectra in a time frame compatible with the epitaxial growth of cubic semiconductors. This algorithm allows for the in situ acquisition of RA spectra and their
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab81be655ed8aaa5c6e33f11ce0a96e2
https://doi.org/10.1016/j.jcrysgro.2019.03.002
https://doi.org/10.1016/j.jcrysgro.2019.03.002
Autor:
A. Lastras-Martínez, J. Ortega-Gallegos, L. E. Guevara-Macías, O. Nuñez-Olvera, R. E. Balderas-Navarro, L. F. Lastras-Martínez, L. A. Lastras-Montaño, M. A. Lastras-Montaño
Publikováno v:
APL Materials, Vol 2, Iss 3, Pp 032107-032107-8 (2014)
We report on real time-resolved Reflectance-difference (RD) spectroscopy of GaAs(001) grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spe
Externí odkaz:
https://doaj.org/article/31f41c126dde40df8d975813400040d9
Autor:
L. E. Guevara-Macías, R. E. Balderas-Navarro, A.D. Ariza-Flores, J. Ortega-Gallegos, A. Lastras-Martínez, R. Castro-García, L. F. Lastras-Martínez, R. E. López-Estopier
Publikováno v:
Applied Surface Science. 439:963-967
We report on the first spectroscopic study of reflectance-anisotropy (RA) oscillations during molecular beam epitaxy (MBE) GaAs homoepitaxy. Real-time RA spectra measured during epitaxial growth were carried out with a recently developed rapid RA mul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81c94976ef498563b871036b137d86c0
https://doi.org/10.1016/j.apsusc.2017.12.244
https://doi.org/10.1016/j.apsusc.2017.12.244
Autor:
L. E. Guevara-Macías, A. Lastras-Martínez, J. Ortega-Gallegos, A. Armenta-Franco, R. E. Balderas-Navarro, L. F. Lastras-Martínez, D. Ariza-Flores
Publikováno v:
Applied Surface Science. 421:608-610
We report on real-time Reflectance-difference spectroscopy measurements carried out during the growth of InGaAs quantum dots (QDs) on GaAs (001) substrates. Measurements were performed with a recently developed rapid RD spectrometer, at a rate of 10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::802c563c194300193beeea2d8de66382
https://doi.org/10.1016/j.apsusc.2016.08.172
https://doi.org/10.1016/j.apsusc.2016.08.172
Autor:
R. Castro-García, R. E. López-Estopier, I. A. Ruiz-Alvarado, A. Lastras-Martínez, D. Ariza-Flores, L. E. Guevara-Macías, J. G. Santiago-García, R. Martínez-Espinosa, J. Ortega-Gallegos, R. E. Balderas-Navarro, L. F. Lastras-Martínez
Publikováno v:
Applied Optics. 59:D39
Reflectance anisotropy spectroscopy (RAS) is a highly sensitive optical probe for the real-time study of the epitaxial growth of zincblende semiconductors. Here we report on (1) non-equilibrium RAS spectra acquired in real time during the homoepitaxi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ebcd3ffee699642d36b1fa9b3b3d91c2
https://doi.org/10.1364/ao.383611
https://doi.org/10.1364/ao.383611
Autor:
R. E. Balderas-Navarro, L. F. Lastras-Martínez, L. E. Guevara-Macías, A. Lastras-Martínez, R. E. López-Estopier, D. Ariza-Flores, O. Núñez-Olvera, J. Ortega-Gallegos
Publikováno v:
AIP Conference Proceedings.
We report on time-resolved Reflectance Anisotropy Spectroscopy (RAS) measurements carried out during the molecular beam epitaxial growth of GaAs (001). Growth started on a c(4x4) reconstructed surface which changed to (2x4) and then to (4x) as growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bebe9c1cd0335e6db9dfc5d2c5353d96
https://doi.org/10.1063/1.5024495
https://doi.org/10.1063/1.5024495
Autor:
L. E. Guevara-Macías, L. F. Lastras-Martínez, A. Lastras-Martínez, J. Ortega-Gallegos, R. E. Balderas-Navarro, D. Ariza-Flores
Publikováno v:
AIP Conference Proceedings.
We report on real-time spectroscopic reflectance anisotropy measurements carried out during the epitaxial growth of GaAs/GaAs (001). Our work is aimed to the study of fundamental processes occurring during the epitaxial growth of III-V semi-conductor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::efd8b4c17f920e18b25e0a05d2ce2a2e
https://doi.org/10.1063/1.5024494
https://doi.org/10.1063/1.5024494
Autor:
L. A. Lastras-Montaño, L. E. Guevara-Macías, R. E. Balderas-Navarro, Miguel Angel Lastras-Montano, J. Ortega-Gallegos, L. F. Lastras-Martínez, A. Lastras-Martínez, O. Núñez-Olvera
Publikováno v:
Journal of Crystal Growth. 425:21-24
We report on real-time reflectance-difference (RD) spectroscopic measurements carried out during the homoepitaxial grow of GaAs under As overpressures in the range from P As = 6 × 10 − 7 − 5 × 10 − 6 Torr . We found that the time-dependent RD
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d537f9464079b6a5f59ff1460c221741
https://doi.org/10.1016/j.jcrysgro.2015.02.061
https://doi.org/10.1016/j.jcrysgro.2015.02.061
Autor:
Miguel Angel Lastras-Montano, R. E. Balderas-Navarro, A. Armenta-Franco, J. Ortega-Gallegos, A. Lastras-Martínez, L. F. Lastras-Martínez, O. Núñez-Olvera, L. E. Guevara-Macías
Publikováno v:
The Review of scientific instruments. 83(10)
We report on a rapid, 32-channel reflectance-difference (RD) spectrometer with sub-second spectra acquisition times and ΔR/R sensitivity in the upper 10(-4) range. The spectrometer is based on a 50 kHz photo-elastic modulator for light polarization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32898e6187278581d22c37a2607ea689
https://pubmed.ncbi.nlm.nih.gov/23126753
https://pubmed.ncbi.nlm.nih.gov/23126753
Autor:
L. F. Lastras-Martínez, J. Ortega-Gallegos, D. Ariza-Flores, R. E. Balderas-Navarro, A. Lastras-Martínez, O. Núñez-Olvera, L. E. Guevara-Macías
Publikováno v:
Measurement Science and Technology. 26:115901
We report on a reflectance anisotropy (RA) spectrometer capable of measuring reflectance spectra on the 100 ms time-scale and sensitivity in the upper 10−4 range. A multichannel lock-in amplifier was used to acquire 32 wavelengths RA spectra coveri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1c6e292479c5bb6d971720c160381f2
https://doi.org/10.1088/0957-0233/26/11/115901
https://doi.org/10.1088/0957-0233/26/11/115901