Zobrazeno 1 - 10
of 42
pro vyhledávání: '"L. Dolgyi"'
Autor:
Evgene B. Chubenko, Yongai Zhang, Alexander Smirnov, Andrew Stepanov, S. V. Redko, Guoxiong Zhou, Vitaly Bondarenko, Yan Qun, Zhixian Lin, Alexei L. Dolgyi
Publikováno v:
SID Symposium Digest of Technical Papers. 50:221-224
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::848efe6f2d4282c5682455658852a5f8
https://doi.org/10.1002/sdtp.13447
https://doi.org/10.1002/sdtp.13447
Autor:
A. L. Danilyuk, A. V. Andreyenka, E. B. Chubenko, Vitaly Bondarenko, M. Trezza, Serghej L. Prischepa, Carmine Attanasio, A. L. Dolgiy, S. V. Redko, Carla Cirillo, Al. L. Dolgyi, V. A. Petrovich
Publikováno v:
Physics, Chemistry and Application of Nanostructures: Reviews and Short Notes to Nanomeeting-2017
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61ba7be1c6242972cac5da82fc44adf7
https://doi.org/10.1142/9789813224537_0007
https://doi.org/10.1142/9789813224537_0007
Publikováno v:
Physics, Chemistry and Applications of Nanostructures: Proceedings of International Conference Nanomeeting – 2015
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a80f11a37e7f1357ead44c0e58ee2db4
https://doi.org/10.1142/9789814696524_0089
https://doi.org/10.1142/9789814696524_0089
Autor:
V. Yakovtseva, L. Postnova, N. Vorozov, Vitaly Bondarenko, V. Ferrara, V. Levchenko, L. Dolgyi, Marco Balucani, Aldo Ferrari, G. Lamedica
Publikováno v:
physica status solidi (a). 182:195-199
In the present work, we report on the heteroepitaxial growth of PbS on porous silicon (PS). Epitaxial PbS films were grown by MBE on the surface of PS formed on the n+-type silicon (111) substrate. The films were comparable with films grown on BaF2 s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f22750a978862918a22978e6995607e
https://doi.org/10.1002/1521-396x(200011)182:1<195::aid-pssa195>3.0.co
https://doi.org/10.1002/1521-396x(200011)182:1<195::aid-pssa195>3.0.co
Autor:
G. Lamedica, A. Ricciardelli, E. Viarengo, L. Dolgyi, Vitaly Bondarenko, N. Vorozov, Aldo Ferrari, Marco Balucani
Publikováno v:
Materials Science in Semiconductor Processing. 3:351-355
The greatest limit in high-speed communications between different circuit blocks is due to the delays introduced by metal interconnections. Knock-down wire communication bottleneck is, therefore, one of the best goals that current research could reac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a716dc069bd0704333f6d489fea0067d
https://doi.org/10.1016/s1369-8001(00)00055-x
https://doi.org/10.1016/s1369-8001(00)00055-x
Autor:
L. Dolgyi, V. Yakovtseva, Vitaly Bondarenko, G. Lamedica, L. Franchina, N. Vorozov, N. Kazuchits, Marco Balucani, Aldo Ferrari
Publikováno v:
Journal of Porous Materials. 7:215-222
A brief review of 20-years research of formation, processing and utilizing of oxidized porous silicon (OPS) is presented. Electrolytes to form porous silicon (PS) layers, special features of PS chemical cleaning and thermal oxidation are discussed. O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a4bf515033324e3e7b867c3e3fdc5f82
https://doi.org/10.1023/a:1009647007232
https://doi.org/10.1023/a:1009647007232
Autor:
V. Yakovtseva, Leonid Tsybeskov, L. Dolgyi, Philippe M. Fauchet, N. Kazuchits, V. Petrovich, Vitaly Bondarenko, S. Volchek
Publikováno v:
Journal of Porous Materials. 7:37-40
Electrochemical treatment of porous silicon (PS) in ethanol solution of Er(NO3)3 was investigated to obtain material suitable for optoelectronic application. The voltammograms of n+-type and p-type PS vs. an Ag/AgCl reference electrode were examined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97a8ee13afd9e74ea962e42b7162c554
https://doi.org/10.1023/a:1009647903656
https://doi.org/10.1023/a:1009647903656
Autor:
G. Lamedica, L. Dolgyi, Aldo Ferrari, Marco Balucani, V. Yakovtseva, Vitaly Bondarenko, L. Franchina
Publikováno v:
Journal of Porous Materials. 7:23-26
The properties of porous silicon (PS) are closely connected to its morphology, much investigation has been done in order to correlate the morphological characteristics of PS with the anodisation parameters. In this paper the results of morphological
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9db639683b6563c971e99a7a19f60606
https://doi.org/10.1023/a:1009627412800
https://doi.org/10.1023/a:1009627412800
Publikováno v:
Thin Solid Films. 348:141-144
Epitaxial PbS films were grown by molecular-beam epitaxy (MBE) on the surface of porous silicon (PS) formed on the silicon substrate of (111) orientation. The uniform PS layers 5 μm thick were produced by electrochemical anodic treatment of n + -sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dac8ec43e74668685b6ebd6f84d46ce4
https://doi.org/10.1016/s0040-6090(99)00052-8
https://doi.org/10.1016/s0040-6090(99)00052-8
Autor:
S. La Monica, Gianlorenzo Masini, V. Bondarenko, L. Dolgyi, V. Yakovtseva, G. Maiello, Marco Balucani, Aldo Ferrari
Publikováno v:
Solid State Phenomena. 54:75-85
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d7e3e5951ac8d7161ab3b2bba28e2b5f
https://doi.org/10.4028/www.scientific.net/ssp.54.75
https://doi.org/10.4028/www.scientific.net/ssp.54.75