Zobrazeno 1 - 10
of 244
pro vyhledávání: '"L. Dobaczewski"'
Autor:
J. Szatkowski, L. Dobaczewski, P. Dyba, G. Karczewski, Z. Gumienny, E. Zielony, Ewa Placzek-Popko
Publikováno v:
Journal of Nanoscience and Nanotechnology. 11:6830-6836
The capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements have been made on a Schottky Ti-ZnTe (p-type) diode containing CdTe self-assembled quantum dots (QD) and control diode without dots. The C-V curve of the QD diode
Autor:
Bruce Hamilton, Vitor J.B. Torres, Vladimir P. Markevich, José Coutinho, L. Dobaczewski, Anthony R. Peaker, S. B. Lastovskii, B. G. Svensson, L.I. Murin
Publikováno v:
physica status solidi (a). 208:568-571
We have recently found that the silicon trivacancy (V3) is a bistable defect that can occur in fourfold coordinated and (110) planar configurations for both the neutral and singly negative charge states [V. P. Markevich et al., Phys. Rev. B 80, 23520
Autor:
V.P. Markevich, A.R. Peaker, S.B. Lastovskii, L.I. Murin, V.V. Litvinov, V.V. Emtsev, L. Dobaczewski
Publikováno v:
Journal of End-to-End-testing. 404:4533-4536
Publikováno v:
Journal of End-to-End-testing. 404:4604-4607
Publikováno v:
Physica B: Condensed Matter. 404:4604-4607
At disordered Si/SiO 2 interfaces the lattice mismatching results in dangling bond P b centres forming a rather broad distribution of energy states. In this study these energy distributions have been determined using isothermal current Laplace deep l
Autor:
L. Dobaczewski, J. Trzmiel, Z. Gumienny, G. Karczewski, Ewa Placzek-Popko, J. Szatkowski, P. Kruszewski, Tomasz Wojtowicz, E. Zielony
Publikováno v:
Physica B: Condensed Matter. 404:5173-5176
In this study the capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS) measurements have been performed on ZnTe (p-type)–Ti/Au Schottky diodes containing one layer of CdTe self-assembled quantum dots (SAQDs). The reference sam
Autor:
Vl. Kolkovsky, A. Nylandsted Larsen, V. Kolkovsky, Joerg Weber, L. Dobaczewski, K. Bonde Nielsen
Publikováno v:
Physica B: Condensed Matter. 404:5080-5084
The behaviour of hydrogen in crystalline semiconductors has attracted considerable interest during several decades. Due to its high diffusion rate and ability to react with a wide variety of lattice imperfections such as intrinsic point defects, impu
Autor:
L. Dobaczewski, V. V. Litvinov, S. B. Lastovskii, Anthony R. Peaker, Valentin V. Emtsev, Vladimir P. Markevich, L.I. Murin
Publikováno v:
Physica B: Condensed Matter. 404:4533-4536
Electrically active defects induced in oxygen-rich Ge:Sb crystals by irradiation with MeV electrons at 80 or 300 K have been studied by means of capacitance transient techniques. Transformations of the defects upon post-irradiation isochronal anneals
Publikováno v:
physica status solidi c. 5:529-534
The piezospectroscopic analysis of point defects allows to describe fixed defects embedded in a crystal environment of immobile atoms. This description works well when all atoms vibrate around fixed equilibrium positions and these vibrations are much
Autor:
V. Kolkovsky, L. Dobaczewski, P. Kruszewski, Nickolay Abrosimov, Abdelmadjid Mesli, A. Nylandsted Larsen
Publikováno v:
J. Mater. Sci., Mater. Electron.
J. Mater. Sci., Mater. Electron., 2008, pp. 115-121
12th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XII)
12th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XII), 2007, Berlin, Germany
J. Mater. Sci., Mater. Electron., 2008, pp. 115-121
12th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XII)
12th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XII), 2007, Berlin, Germany
The progress achieved in the various epitaxial-growth procedures is significant enough today to allow the addressing of new questions related to the structures at the atomic scale of various defects in alloy materials. In this review we shall focus p