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pro vyhledávání: '"L. Dip"'
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Akademický článek
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Akademický článek
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Autor:
David C. Gilmer, R. Garcia, William J. Taylor, Rama I. Hegde, Raghaw S. Rai, J. M. Grant, Hsing-Huang Tseng, Christopher C. Hobbs, V. Dhandapani, Bruce E. White, S.G.H. Anderson, A. Knizhnik, Philip J. Tobin, S. Samavedam, D. Triyoso, E. A. Hebert, M.L. Lovejoy, D. Roan, L. R. C. Fonseca, L. Dip
Publikováno v:
IEEE Transactions on Electron Devices. 51:978-984
We report here that Fermi pinning at the polysilicon/metal-oxide interface causes high threshold voltages in MOSFET devices. In Part I, we investigated the different gatestack regions and determined that the polysilicon/metal oxide interface plays a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04255d38837b6f5b3ccad799807525cc
https://doi.org/10.1109/ted.2004.829510
https://doi.org/10.1109/ted.2004.829510
Autor:
Srikanth B. Samavedam, James Nelson Smith, Philip J. Tobin, H.-H. Tseng, D. Triyoso, R. Cotton, Raghaw S. Rai, R. Garcia, Christopher C. Hobbs, B. Taylor, Rama I. Hegde, L.B. La, V. Dhandapani, L. Dip, D. Roan, L. Prabhu, A. Franke, David C. Gilmer, J. M. Grant
Publikováno v:
Microelectronic Engineering. 69:138-144
Silicon gate compatibility problems with hafnium-basd gate dielectrics are reported. It generally can be stated that chemical vapor deposition (CVD) silicon gates using silane deposited directly onto polycrystalline HfO2 at conventional temperatures
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1d4898c6932f300f9ca0a585c13db50
https://doi.org/10.1016/s0167-9317(03)00290-9
https://doi.org/10.1016/s0167-9317(03)00290-9
Publikováno v:
Pancreatitis-Treatment and Complications
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7d14bf86f44fbd037e68ce7df5ff4b4
https://doi.org/10.5772/27501
https://doi.org/10.5772/27501
Publikováno v:
Applied Physics Letters. 80:3850-3852
Using a deposition followed by high-temperature drive in, we have examined the impact of metalorganic chemical vapor deposition (MOCVD) HfO2, MOCVD ZrO2, and physical vapor deposition (PVD) ZrxSi1−xO2 gate dielectrics on the minority carrier lifeti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd7ca804f40c883df1564176baa11b94
https://doi.org/10.1063/1.1480883
https://doi.org/10.1063/1.1480883
Publikováno v:
Acta gastroenterologica Latinoamericana. 40(3)
Biliary strictures are a serious complication of biliary surgery. Historically, surgery was the treatment of choice. Then appeared the endoscopic treatment with results comparable with those achieved by the surgery.Twenty-two patients underwent endos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::0e79f55d0e4cc562671c150d9c7662d0
https://pubmed.ncbi.nlm.nih.gov/21053482
https://pubmed.ncbi.nlm.nih.gov/21053482
Autor:
Rama I. Hegde, L. Hebert, Philip J. Tobin, L. Lovejoy, D. Roan, Bruce E. White, R. Rai, R. Garcia, B. Taylor, V. Dhandapani, S. Samavedam, Dina H. Triyoso, John M. Grant, David Gilmer, Chris Hobbs, H.-H. Tseng, L. R. C. Fonseca, L. Dip
Publikováno v:
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).
We report here for the first time that Fermi pinning at the polySi/metal oxide interface causes high threshold voltages in MOSFET devices. Results indicate that pinning occurs due to the interfacial Si-Hf and Si-O-Al bonds for HfO/sub 2/ and Al/sub 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::420499503120cb29343e6ba954a5bd04
https://doi.org/10.1109/vlsit.2003.1221060
https://doi.org/10.1109/vlsit.2003.1221060
Autor:
S. Bagchi, L. Hebert, J. Conner, L. Prabhu, J. M. Grant, Kimberly G. Reid, David Gilmer, B. Taylor, Christopher C. Hobbs, S. Backer, Bich-Yen Nguyen, Philip J. Tobin, R. Rai, Rama I. Hegde, M. Azrak, R. Garcia, H.-H. Tseng, L. Dip, V. Dhandapani, A. Franke, F. Dumbuya
Publikováno v:
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
We report here for the first time the formation of an amorphous oxide layer between the polysilicon gate and hafnium oxide (HfO/sub 2/) gate dielectric due to a lateral oxidation mechanism at the gate edge. Using a polySi reoxidation-free CMOS proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c11361040807d6784fdb07f88af602dc
https://doi.org/10.1109/iedm.2001.979592
https://doi.org/10.1109/iedm.2001.979592