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Autor:
L. Ding1, J. Diaz, G. Christmann, L.-L. Senaud, L. Barraud, A. Descoeudres, N. Badel, M. Despeisse, S. Nicolay, C. Ballif1.
Publikováno v:
35th EUPVSEC
Silicon heterojunction technology (HJT) enables record efficiencies for silicon-based solar cells [1]. The main advantage is the excellent surface passivation offered by hydrogenated amorphous silicon (a-Si:H), enabling record open circuit voltages.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2bb3b18f9beb5df7c37f3056a008bf3a
