Zobrazeno 1 - 10
of 16
pro vyhledávání: '"L. Depoyan"'
Autor:
L. Depoyan, Alain Chantre, S. Montusclat, Malick Diop, Pascal Chevalier, M. Buczko, C. Leyris, Sorin P. Voinigescu, K.H.K. Yau, A. Margain, N. Derrier, S. Boret, S.T. Nicolson, Nicolas Loubet, S. Pruvost, G. Avenier, Nathalie Revil, Didier Dutartre, J. Bouvier, Daniel Gloria, G. Troillard
Publikováno v:
IEEE Journal of Solid-State Circuits. 44:2312-2321
This paper presents a complete 0.13 μm SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280 GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2426966728ff3b39a43ccaaae889c1b7
https://doi.org/10.1109/jssc.2009.2024102
https://doi.org/10.1109/jssc.2009.2024102
Autor:
Pascal Chevalier, M. Buczko, Christophe Gaquiere, Y. Campidelli, L. Depoyan, L. Berthier, T. Lacave, G. Avenier, Alain Chantre
Publikováno v:
Proceedings of 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010
2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010
2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010, 2010, United States. pp.49-52, ⟨10.1109/BIPOL.2010.5667965⟩
2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010
2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2010, 2010, United States. pp.49-52, ⟨10.1109/BIPOL.2010.5667965⟩
This paper summarizes the work carried out on the vertical profile of double-polysilicon SiGe:C HBTs to get f MAX above 400 GHz. The effects of the final spike annealing temperature, the emitter doping species, the base and collector doping levels an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cc44b152ac98e4d1d9fca6d462a60f1b
https://doi.org/10.1109/bipol.2010.5667965
https://doi.org/10.1109/bipol.2010.5667965
Autor:
Bénédicte Mortini, E. Mortini, Vincent Farys, Stéphanie Audran, C. Cowache, L. Berthier, J.-P. Reynard, O. Arnaud, C. Baron, J. Fantuz, Frank Sundermann, L. Depoyan, Jérôme Vaillant, Flavien Hirigoyen, Emilie Huss
Publikováno v:
SPIE Proceedings.
Microlens arrays are used on CMOS image sensors to focus incident light onto the appropriate photodiode and thus improve the device quantum efficiency. As the pixel size shrinks, the fill factor of the sensor (i.e. ratio of the photosensitive area to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e98571962229f2e0a10bd40d54a02623
https://doi.org/10.1117/12.846507
https://doi.org/10.1117/12.846507
Autor:
Christophe Gaquiere, Pascal Chevalier, Frederic André, M. Buczko, L. Depoyan, Y. Campidelli, Alain Chantre, G. Avenier, L. Berthier, Thomas Lacave
Publikováno v:
ECS Transactions, 33
218th Electrochemical Society Meeting, 218th ECS Meeting, 'SiGe, Ge, and Related Compounds 4 : Materials, Processing, and Devices'
218th Electrochemical Society Meeting, 218th ECS Meeting, 'SiGe, Ge, and Related Compounds 4 : Materials, Processing, and Devices', 2010, United States. pp.331-335, ⟨10.1149/1.3487563⟩
218th Electrochemical Society Meeting, 218th ECS Meeting, 'SiGe, Ge, and Related Compounds 4 : Materials, Processing, and Devices'
218th Electrochemical Society Meeting, 218th ECS Meeting, 'SiGe, Ge, and Related Compounds 4 : Materials, Processing, and Devices', 2010, United States. pp.331-335, ⟨10.1149/1.3487563⟩
We present in this paper the influence of the integration of the Selectively Implanted Collector (SIC) on the performance of +400 GHz fMAX Si/SiGe:C HBTs featuring a selective epitaxy of the base [1]. The process uses a standard collector module (n+
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a13e97a595d21ee533f8642daf6f437a
https://hal.archives-ouvertes.fr/hal-00550006
https://hal.archives-ouvertes.fr/hal-00550006
Autor:
Y. Campidelli, Pascal Chevalier, F. Pourchon, L. Depoyan, Alain Chantre, M. Buczko, G. Troillard, T. Lacave, Didier Celi, Daniel Gloria, G. Avenier, Christophe Gaquiere
Publikováno v:
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
This paper summarizes the work carried out to improve performances of a conventional double-polysilicon FSA-SEG SiGe:C HBT towards 400 GHz f MAX . The technological optimization strategy is discussed and electrical characteristics are presented. A re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ba1b59769254ffe4844d54ffbc94eff
https://doi.org/10.1109/bipol.2009.5314250
https://doi.org/10.1109/bipol.2009.5314250
Autor:
B. Vandelle, Alain Chantre, S. Montusclat, Daniel Gloria, F. Brossard, G. Troillard, A. Margain, Pascal Chevalier, S. Pruvost, Didier Dutartre, M. Buczko, K.H.K. Yau, S. Boret, L. Depoyan, Sorin P. Voinigescu, G. Avenier, S.T. Nicolson
Publikováno v:
2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
This paper presents a complete 0.13 mum SiGe BiCMOS technology fully dedicated to millimeter-wave applications, including a high-speed (230/280GHz fT/fMAX) and medium voltage SiGe HBT, thick-copper back-end designed for high performance transmission
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0883c0b60d41aad1622e770763e3ed3b
https://doi.org/10.1109/bipol.2008.4662719
https://doi.org/10.1109/bipol.2008.4662719
Akademický článek
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Conference
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Conference
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