Zobrazeno 1 - 10
of 133
pro vyhledávání: '"L. Dózsa"'
Autor:
Zofia Vértesy, Zsolt Endre Horváth, L. Dózsa, György Molnár, Antal A. Koós, E. Zsoldos, G. Pető
Publikováno v:
Thin Solid Films. 459:48-52
Iron–silicides were grown on Si by reactive deposition epitaxy method and by conventional solid phase reaction. The morphology of silicides was investigated by optical microscopy, scanning electron microscopy and by atomic force microscopy. The pha
Publikováno v:
The European Physical Journal Applied Physics. 27:85-88
Self-assembled β-FeSi 2 quantum (QD) dots were grown on n-type Si and investigated in this work. Secondary electron images show the shape and distribution of the quantum dots depends on the temperature and thickness of the Fe deposition. Electrical
Autor:
L. Dózsa
Publikováno v:
Defect and Diffusion Forum. :11-22
Publikováno v:
JJAP Conference Proceedings. 5:011403-011403
Autor:
S. Franchi, E. Gombia, Paola Frigeri, Zs. J. Horváth, L Dózsa, Á. Nemcsics, Vo Van Tuyen, B. Pődör, Roberto Mosca
Publikováno v:
Scopus-Elsevier
The electrical characteristics of InAs quantum dot and quantum well structures embedded in GaAs confining layers have been compared and interpreted with the effect of the potential barrier and recharging processes of quantum dots and quantum well.
Autor:
Paola Frigeri, Jiří Mareš, S. Franchi, L. Dózsa, Pavel Hubík, E. Gombia, Zs. J. Horváth, A. L. Tóth, Roberto Mosca, Jozef Krištofik
Publikováno v:
EPJ. Applied physics
27 (2004): 93–95. doi:10.1051/epjap:2004113
info:cnr-pdr/source/autori:L. Dózsa1, A. L. Tóth1, Zs. J Horváth1, P. Hubík2, J. Kri?tofik2, J. J. Mare?2, E. Gombia3, R. Mosca3, S. Franchi3 and P. Frigeri3/titolo:Lateral conductivity in GaAs%2FInAs quantum dot structures/doi:10.1051%2Fepjap:2004113/rivista:EPJ. Applied physics (Print)/anno:2004/pagina_da:93/pagina_a:95/intervallo_pagine:93–95/volume:27
DRIP X-10h International Conference on Defects: Recognition, Imaging and Physics of Semiconductors, Batz-sur-Mer (Francia), 2003
info:cnr-pdr/source/autori:Dozsa L., Toth L., Horvath Zs.J., Hubik P., Kristofik J., Mares J.J., Gombia E., Frigeri P., Mosca R., Franchi S./congresso_nome:DRIP X-10h International Conference on Defects: Recognition, Imaging and Physics of Semiconductors/congresso_luogo:Batz-sur-Mer (Francia)/congresso_data:2003/anno:2003/pagina_da:/pagina_a:/intervallo_pagine
27 (2004): 93–95. doi:10.1051/epjap:2004113
info:cnr-pdr/source/autori:L. Dózsa1, A. L. Tóth1, Zs. J Horváth1, P. Hubík2, J. Kri?tofik2, J. J. Mare?2, E. Gombia3, R. Mosca3, S. Franchi3 and P. Frigeri3/titolo:Lateral conductivity in GaAs%2FInAs quantum dot structures/doi:10.1051%2Fepjap:2004113/rivista:EPJ. Applied physics (Print)/anno:2004/pagina_da:93/pagina_a:95/intervallo_pagine:93–95/volume:27
DRIP X-10h International Conference on Defects: Recognition, Imaging and Physics of Semiconductors, Batz-sur-Mer (Francia), 2003
info:cnr-pdr/source/autori:Dozsa L., Toth L., Horvath Zs.J., Hubik P., Kristofik J., Mares J.J., Gombia E., Frigeri P., Mosca R., Franchi S./congresso_nome:DRIP X-10h International Conference on Defects: Recognition, Imaging and Physics of Semiconductors/congresso_luogo:Batz-sur-Mer (Francia)/congresso_data:2003/anno:2003/pagina_da:/pagina_a:/intervallo_pagine
Lateral conductivity effects have been investigated in self-organised InAs quantum dot (QD) structures grown in a GaAs matrix with different cap layers. Current-voltage (I-V), capacitance-voltage (C-V), DLTS, capacitance and conductance frequency dep
Autor:
Ákos Pap, I Takács, Richard Schwab, K. Illés, L Dózsa, F. Kovács, J Hamvas, Tibor Gyökeres, A. Szakács, M Varsányi, M. Burai, G Fodor
Publikováno v:
Zeitschrift für Gastroenterologie. 42
Rectal bleeding from colon endometriosis may be difficult to differentiate from that of colon cancer
Publikováno v:
Zeitschrift für Gastroenterologie. 42
Publikováno v:
Heterostructure Epitaxy and Devices ISBN: 9789401065931
Heterostructure Epitaxy and Devices
Heterostructure Epitaxy and Devices
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3fa66bdecae974818669bd8467ebeb0c
https://doi.org/10.1007/978-94-009-0245-9_21
https://doi.org/10.1007/978-94-009-0245-9_21
Autor:
L Dobos, N. G. Galkin, T. V. Turchin, A. I. Cherednichenko, N. Q. Khánh, Lajos Tóth, L Dózsa, Béla Pécz, D. L. Goroshko
Publikováno v:
Journal of Physics: Condensed Matter. 19:506204
Semiconducting CrSi2 nanocrystallites (NCs) were grown by reactive deposition epitaxy. The NCs were covered by 100 nm of epitaxial silicon. Their structure, morphology and optical properties were investigated by transmission electron microscopy (TEM)