Zobrazeno 1 - 3
of 3
pro vyhledávání: '"L. Crook, Alexander"'
Autor:
L. Crook, Alexander, P. Anderson, Christopher, C. Miao, Kevin, Bourassa, Alexandre, Lee, Hope, L. Bayliss, Sam, O. Bracher, David, Zhang, Xingyu, Abe, Hiroshi, Ohshima, Takeshi, L. Hu, Evelyn, David, D. Awschalom
Publikováno v:
Nano Letters. 20(5):3427-3434
Silicon carbide has recently been developed as a platform for optically addressable spin defects. In particular, the neutral divacancy in the 4H polytype displays an optically addressable spin-1 ground state and near-infrared optical emission. Here,
Autor:
P. Anderson, Christopher, Bourassa, Alexandre, C. Miao, Kevin, Wolfowicz, Gary, J. Mintun, Peter, L. Crook, Alexander, Abe, Hiroshi, Ul Hassan, Jawad, T. Son, Nguyen, Ohshima, Takeshi, D. Awschalom, David, Hiroshi, Abe, Takeshi, Ohshima
Publikováno v:
Science. 366:1225-1230
Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we integrated
Autor:
P. Anderson, Christopher, O. Glen, Elena, Zeledon, Cyrus, Bourassa, Alexandre, Jin, Yu, Zhu, Yizhi, Vorwerk, Christian, L. Crook, Alexander, Hiroshi, Abe, Jawad, Ul-Hassan, Takeshi, Ohshima, T. Son, Nguyen, Galli, Giulia, D. Awschalom, David
Publikováno v:
Science Advances. 8(5):eabm5912
An outstanding hurdle for defect spin qubits in silicon carbide (SiC) is single-shot readout, a deterministic measurement of the quantum state. Here, we demonstrate single-shot readout of single defects in SiC via spin-tocharge conversion, whereby th