Zobrazeno 1 - 10
of 72
pro vyhledávání: '"L. Coulbeck"'
Publikováno v:
IECON
Accelerated passive cycling test is a typical and effective way to evaluate the substrate solder layer degradation of power modules due to thermal stresses. The main failure mechanism is the initiation and penetration of cracks inside the solder laye
Autor:
Matthew Packwood, M. Birkett, Yangang Wang, Huaping Jiang, P. Mumby-Croft, Yogesh K. Sharma, L. Coulbeck, Ian Deviny, C. Kong, Luther-King Ngwendson
Publikováno v:
Materials Science Forum. 963:859-863
Substituting Si diodes with SiC Schottky diodes in Si insulated gate bipolar transistor (IGBT) modules is beneficial, as it can reduce power losses in electrical systems significantly. The fast switching nature of the SiC diode will allow Si IGBTs to
Publikováno v:
Journal of the Korean Physical Society. 73:1356-1361
Replacing conventional Si diodes with SiC diodes in Si insulated gate bipolar transistor (IGBT) modules is advantageous as it can reduce power losses significantly. Also, the fast switching nature of the SiC diode will allow Si IGBTs to operate at th
Autor:
Ariiul Islam, L. Coulbeck, Matthew Packwood, Haihui Luo, Guoyou Liu, Daohui Li, Fang Qi, Xiang Li, Xiaoping Dai, Yangang Wang
Publikováno v:
2018 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE).
High power IGBT modules are crucial component in switching power electronic applications, such as renewable energy, traction, electrical vehicles. The IGBT module packages usually provide electromagnetic (EM) and chemical protection, mechanical suppo
Publikováno v:
Microelectronics Reliability. 52:2609-2616
The study proposes the design and transient analysis of an IGBT non-destructive tester. The tester is designed to test IGBTs at voltage and current ratings less than 3.3 kV 2.4 kA. Due to stray elements, the circuit might oscillate during the differe
Publikováno v:
Microelectronics Reliability. 52:2358-2362
Non-destructive testing capability is a very important aspect of power device technology evolution towards more robust and reliable products. This paper proposes a closed-loop non-destructive tester for high power multi-chip IGBT modules. Other than
Autor:
N. Luther-King, L. Coulbeck, R. Dudley, Ekkanath Madathil Sankara Narayanan, Allan David Crane
Publikováno v:
IEEE Transactions on Power Electronics. 25:583-591
Recently much research has been focused on increasing the functionality and output power density per unit area in power electronic modules without increasing board space. In high power applications, MOS-controlled devices with trench gates are the mo
Autor:
M. Dixon, A. Garraway, L. Coulbeck, Florin Udrea, Mihai Brezeanu, Daniel J. Twitchen, P. Taylor, Jan Isberg, T. Butler, Gehan A. J. Amaratunga, A. Tajani, S.J. Rashid, Nalin L. Rupesinghe
Publikováno v:
Diamond and Related Materials. 15:317-323
The modelling of Schottky m-i-p+ (SMIP) diodes fabricated on chemical vapour deposited (CVD) single crystal (SC) diamond intrinsic layers grown on highly boron doped CVD diamond substrates is reported. Variations in intrinsic layer thickness, Schottk
Autor:
Xavier Jordà, Salvador Hidalgo, L. Coulbeck, Jose Rebollo, David Flores, Miquel Vellvehi, P. Waind
Publikováno v:
Microelectronics Journal. 35:269-275
This article addresses the design of an optimal cell suitable for 6.5 kV Insulated Gate Bipolar Transistor (IGBTs). Simulations of the layout optimisation and process technology considerations for the 6.5 kV IGBT basic cell are presented. The simulat
Publikováno v:
IEEE Transactions on Power Electronics. 17:815-823
A two-dimensional on-state analytical model of the insulated gate bipolar transistor (IGBT) with local lifetime control is developed. The model accounts for the effect of local lifetime killing in particular the effective value of the lifetime and th