Zobrazeno 1 - 10 of 15 pro vyhledávání: '"L. C. Poças"'
1
Controlling the fluorescence intensity of luminescent thin films by photoisomerization of azo dyes
Autor: Edson Laureto, Ricardo Vignoto Fernandes, José Leonil Duarte, H. de Santana, L. C. Poças
Publikováno v: Journal of Luminescence. 223:117223
Luminescent poly p-phenylene vinylene (PPV) thin films were produced by the layer-by-layer technique, using organic dyes as the counter ion. It was observed that, when dyes with azo groups are incorporated in the PPV polymeric chains, the fluorescenc
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9985acd7fc6424c93ab9f755d79d5ca4
https://doi.org/10.1016/j.jlumin.2020.117223
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2
Decreased degradation of poly(p-phenylene vinylene) films at the indium–tin oxide interface
Autor: José Roberto Tozoni, L. C. Poças, S. L. Nogueira, Roberto S. Nobuyasu, M. J. M. Pires, Alexandre Marletta, Raigna A. Silva, Gustavo G. Dalkiranis
Publikováno v: Journal of Materials Science. 46:2644-2648
This article discusses a strategy to reduce the degradation of a poly(p-phenylene vinylene) (PPV) film at the interface with an indium–tin oxide (ITO) electrode. It consists of using a less aggressive leaving group, the sodium dodecylbenzenesulfona
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e3e4df1307797dcdd44428cadd282a66
https://doi.org/10.1007/s10853-010-5119-7
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3
Exciton behavior in GaAs/AlGaAs coupled double quantum wells with interface disorder
Autor: José Leonil Duarte, E. M. Lopes, L. C. Poças, Edson Laureto, Ivan Frederico Lupiano Dias, A. A. Quivy, T. E. Lamas
Publikováno v: Journal of Luminescence. 130:460-465
In this work, we present a detailed study on the optical properties of two GaAs/Al 0.35 Ga 0.65 As coupled double quantum wells (CDQWs) with inter-well barriers of different thicknesses, by using photoluminescence (PL) spectroscopy. The two CDQWs wer
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::166e9d50890b4cbac3888bdf8a80af5a
https://doi.org/10.1016/j.jlumin.2009.10.013
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4
Absorption and emission properties of LBL PPV films deposited on ITO electrodes
Autor: Maria Leticia Vega, R.A. Silva, Erick Piovesan, K.R. Campos, L. C. Poças, S. L. Nogueira, Alexandre Marletta
Publikováno v: Journal of Non-Crystalline Solids. 354:4852-4855
In this work we studied the properties of absorption and emission line shape of layer-by-layer (LBL) poly(p-phenylene vinylene) (PPV) on indium-tin oxide (ITO) electrode. To minimize the PPV thermal conversion effects during the polymer processing, w
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::97958e5b4039800c8d0477739ba439d0
https://doi.org/10.1016/j.jnoncrysol.2008.04.034
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5
Effect of temperature on the optical properties of GaAsSbN/GaAs single quantum wells grown by molecular-beam epitaxy
Autor: Ivan Frederico Lupiano Dias, J. B. B. de Oliveira, Sidney A. Lourenço, José Leonil Duarte, Jean-Christophe Harmand, L. C. Poças
Publikováno v: Journal of Applied Physics. 93:4475-4479
GaAsSbN/GaAs strained-layer single quantum wells grown on a GaAs substrate by molecular-beam epitaxy with different N concentrations were studied using the photoluminescence (PL) technique in the temperature range from 9 to 296 K. A strong redshift i
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e8df7d2ba3c234dff126a165cc2ac410
https://doi.org/10.1063/1.1560574
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6
Photoluminescence study of interfaces between heavily doped Al0.48In0.52As:Si layers and InP (Fe) substrates
Autor: E. A. Meneses, L. C. Poças, S. A. Lourenço, I. F. L. Dias, Irineu Mazzaro, Jean-Christophe Harmand, E. Laureto, D. O. Toginho Filho, J. L. Duarte
Publikováno v: Journal of Applied Physics. 91:8999-9004
Properties of the interface between the epitaxial layer of heavily doped Al0.48In0.52As:Si and the InP(Fe) substrate are investigated by photoluminescence in AlInAs:Si/InP(Fe) heteroestructures grown by molecular beam epitaxy. The effect on heterostr
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a4f6c1f9201b3fab336cd688129c778c
https://doi.org/10.1063/1.1475370
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7
A comparative study of AlGaAsSb/AlAsSb distributed Bragg mirrors on InP
Autor: Edson Laureto, Sidney A. Lourenço, D. O. Toginho Filho, José Leonil Duarte, Jean-Christophe Harmand, Ivan Frederico Lupiano Dias, L. C. Poças
Publikováno v: Superlattices and Microstructures. 31:277-283
AlGaAsSb/AlAsSb Bragg mirrors lattice matched on InP with six pairs of layers were grown by molecular beam epitaxy. The effect of Te doping on the electrical and optical properties of the Bragg mirrors, and the presence of digital alloy gradient laye
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d63808b2245377b75ca30f05e1ba7c27
https://doi.org/10.1006/spmi.2002.1046
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8
Competition between confinement potential fluctuations and band-gap renormalization effects inIn0.53Ga0.47As/In0.525Ga0.235Al0.25Assingle and double quantum wells
Autor: Edson Laureto, L. C. Poças, Sidney A. Lourenço, Ivan Frederico Lupiano Dias, E. M. Lopes, José Leonil Duarte, Jean-Christophe Harmand
Publikováno v: Physical Review B. 77
We present the results of our studies on the emission properties of ${\text{In}}_{0.53}{\text{Ga}}_{0.47}\text{As}/{\text{In}}_{0.525}{\text{Ga}}_{0.235}{\text{Al}}_{0.25}\text{As}$ single and coupled double quantum wells (CDQWs) with different degre
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::af31fa6c70dc333c75351393114d74d5
https://doi.org/10.1103/physrevb.77.165322
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9
Thermal expansion contribution to the temperature dependence of excitonic transitions in GaAs and AlGaAs
Autor: S. A. Loureno, I. F. L. Dias, J. L. Duarte, E. Laureto, L. C. Poças, D. O. Toginho Filho, J. R. Leite
Publikováno v: Brazilian Journal of Physics v.34 n.2a 2004
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
Brazilian Journal of Physics, Volume: 34, Issue: 2a, Pages: 517-525, Published: JUN 2004
Photoluminescence and photoreflectance measurements have been used to determine excitonic transitions in the ternary Al xGa1-xAs alloy in the temperature range from 2 to 300 K. The effect of the thermal expansion contribution on the temperature depen
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d567698c7291571aad596cbc3736a48
http://old.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97332004000300031
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10
Annealing effects on conductivity and optical properties of the PAni layer in ITO/PAni/PPV+DBS/Al polymer light-emitting diodes
Autor: R.A. Silva, Alexandre Marletta, Silmar Antonio Travain, José Leonil Duarte, José A. Giacometti, L. C. Poças
Publikováno v: Scopus
Repositório Institucional da UNESP
Universidade Estadual Paulista (UNESP)
instacron:UNESP
Made available in DSpace on 2022-04-28T18:55:35Z (GMT). No. of bitstreams: 0 Previous issue date: 2007-10-31 In this work we present the electrical and optical characterization of polymer light-emitting diodes (PLEDs) using indium-tin oxide (ITO), po
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ce60353fe99f6e8e7d79020dca7b08c
https://doi.org/10.1088/0953-8984/19/43/436221
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