Zobrazeno 1 - 10
of 12
pro vyhledávání: '"L. C. Dinetta"'
Autor:
James B. McNeely, P. E. Sims, P.I Rabinowitz, Michael G. Mauk, Allen Barnett, Robert B. Hall, W Bloothoofd, S.R. Collins, L. C. Dinetta, Z.A Shellenbarger
Publikováno v:
Journal of Crystal Growth. 211:411-415
We describe the design, operation, and performance of a high-throughput, large-scale liquid-phase epitaxy system for producing semiconductor optoelectronic devices. This system operates in a semicontinuous mode with high deposition rates and produces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf8bd3ca4c6e22c0a55c3d76d8536781
https://doi.org/10.1016/s0022-0248(99)00805-2
https://doi.org/10.1016/s0022-0248(99)00805-2
Autor:
R.L. Mueller, Z.A Shellenbarger, Andreas W. Bett, J.A. Cox, O.V. Sulima, L. C. Dinetta, J. B. McNeely, P. E. Sims, Michael G. Mauk
Publikováno v:
Journal of Crystal Growth. 211:189-193
Liquid-phase epitaxial (LPE) growth of low-bandgap III–V antimonides is developed for thermophotovoltaic and other optoelectronic device applications. Epitaxial layers of AlGaAsSb, InGaAsSb, and InAsSbP, with thicknesses up to 200 μm, can be grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2cc6c84c059c0b6d6baef9282d921a0
https://doi.org/10.1016/s0022-0248(99)00796-4
https://doi.org/10.1016/s0022-0248(99)00796-4
Publikováno v:
Proceedings of the 25th Intersociety Energy Conversion Engineering Conference.
Free-standing, transparent, tunable bandgap Al/sub x/Ga/sub 1-x/As top solar cells have been fabricated for mechanical attachment in a four terminal tandem stack solar cell. Evaluation of the device results have demonstrated 1.80 eV top solar cells w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c4e195d5b6a52bd284a52ed16e93292
https://doi.org/10.1109/iecec.1990.716961
https://doi.org/10.1109/iecec.1990.716961
Publikováno v:
IEEE Conference on Photovoltaic Specialists.
Free-standing, transparent, tunables bandgap Al/sub x/Ga/sub 1-x/As top solar cells have been fabricated for mechanical attachment in a four-terminal tandem stack solar cell. The device has 1.8 eV top solar cells with efficiencies of 18% (100X, AM0),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7a511e6b24ac6cf6d7a565df283141a
https://doi.org/10.1109/pvsc.1990.111591
https://doi.org/10.1109/pvsc.1990.111591
Autor:
L. C. Dinetta, M.G. Mauk, T.G. Warden, A.N. Tata, Jeffrey A. Cox, R.L. Mueller, Z. A. Shellenbarger
Publikováno v:
Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036).
Thermophotovoltaic devices based on InGaAsSb and InAsSbP alloys made by liquid-phase epitaxy are described. These alloys can be readily grown as thick (>50 micron) layers to form "virtual" substrates. The authors are developing cell fabrication techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a933ebdd606cdad10afe4bf8cc031566
https://doi.org/10.1109/pvsc.2000.916061
https://doi.org/10.1109/pvsc.2000.916061
Autor:
P. E. Sims, J. D. Lesko, J. D. South, Z.A Shellenbarger, Michael G. Mauk, Jeffrey A. Cox, L. C. Dinetta, J. R. Bower
Publikováno v:
MRS Proceedings. 484
Progress on mid-infrared photodetectors fabricated by the liquid phase epitaxial growth of GaInAsSb, InAsSbP, and AlGaAsSb on GaSb and InAs substrates is reported. GaInAsSb p/n and p-i-n detectors, InAsSbP p/n detectors and AlGaAsSb/GaInAsSb avalanch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31de2dbe3508e49542bc3370568f0757
https://doi.org/10.1557/proc-484-135
https://doi.org/10.1557/proc-484-135
Autor:
J. D. Lesko, M.G. Mauk, J.A. Cox, R. L. Mueller, J. B. McNeely, Z. A. Shellenbarger, L. C. Dinetta, P. E. Sims, M. I. Gottfried
Publikováno v:
Third NREL Conference on thermophotovoltaic generation of electricity.
This work seeks to improve the performance of GaSb-based thermophotovoltaic (TPV) devices. Previously, we demonstrated InGaAsSb (∼0.53 bandgap) cells with very high internal quantum efficiencies at wavelengths of 2 microns. Enhanced efficiency shou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4550adf8acc7ef388007d4483208ee6f
https://doi.org/10.1063/1.53292
https://doi.org/10.1063/1.53292
Publikováno v:
Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996.
AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In/sub 1-x/Ga/sub x/As/sub 1-y/Sb/s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7ce7f1ce54b260f9abd1a8d3b87c4d4
https://doi.org/10.1109/pvsc.1996.563951
https://doi.org/10.1109/pvsc.1996.563951
Publikováno v:
Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996.
This technology is based on AstroPower's electrostatic bonding and silicon solar cell processing techniques. Electrostatic bonding allows silicon wafers to be permanently attached to a thermally matched glass superstrate and processed to form the mon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eaa5aed83041f4ac41c124b001ab5734
https://doi.org/10.1109/pvsc.1996.564216
https://doi.org/10.1109/pvsc.1996.564216
Publikováno v:
Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996.
Progress is reported on the development of ultra-lightweight, high performance, thin, light trapped GaAs solar cells for advanced space power systems. Conversion efficiencies of 19.2% (AM0, 1X) have been demonstrated for an adhesive bonded, 3 /spl mu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9da6f435058f73eaaaf55afc6f20538
https://doi.org/10.1109/pvsc.1996.563979
https://doi.org/10.1109/pvsc.1996.563979