Zobrazeno 1 - 10
of 15
pro vyhledávání: '"L. Beloni Devi"'
Publikováno v:
Materials Today: Proceedings. 80:1801-1805
Microstrip silicon detectors are one of the key trackers in particle physics experiment like LHC at CERN. There is a continuous need to improve upon various parameters of detectors like breakdown voltage, leakage current, full depletion voltage, post
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5851aed79e5a8f1328abb6825da857fe
https://doi.org/10.1016/j.matpr.2021.05.614
https://doi.org/10.1016/j.matpr.2021.05.614
Publikováno v:
Microelectronics Journal. 81:28-41
In our strive to improve upon low power high speed devices for digital and mixed signal applications, Symmetric Lateral Bipolar Transistor has come out as a promising candidate and gained importance of late. Researchers in the field have shown improv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95c1ae960b31e7b1eb96a04bdef99061
https://doi.org/10.1016/j.mejo.2018.08.008
https://doi.org/10.1016/j.mejo.2018.08.008
Publikováno v:
2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO).
Impact of Total Ionization Doze (TID) on the charge plasma induced dopingless lateral bipolar transistor on SiGe-OI is studied. This paper proposes a new TID hardened charge plasma induced dopingless bipolar design – Triple Sided Charge Plasma (3SC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c0d48f5200bc2bd2326b6a5eb5d517a
https://doi.org/10.1109/nano46743.2019.8993919
https://doi.org/10.1109/nano46743.2019.8993919
Publikováno v:
2019 IEEE 19th International Conference on Nanotechnology (IEEE-NANO).
Impact of Total Ionization Doze (TID) on substrate biased Symmetric Lateral Bipolar Transistor (SLBT) on SiGe-OI is studied. With the introduction of substrate bias the performances of the device is enhanced. This paper highlights the other side of s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22a4a6cfce99bdf5acb19c4b92d3176f
https://doi.org/10.1109/nano46743.2019.8993933
https://doi.org/10.1109/nano46743.2019.8993933
Publikováno v:
2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC).
Results from recent studies in Symmetric Lateral Bipolar Transistor (SLBT) on SOI makes it as one of the most promising candidate for next generation nano electronic device in low power high speed mixed signal circuits. In this paper we carried out a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aedf7857d0cc542e8a27a49afba93147
https://doi.org/10.1109/nmdc.2018.8605889
https://doi.org/10.1109/nmdc.2018.8605889
Autor:
L. Beloni Devi, A. Srivastava
Publikováno v:
2017 8th IEEE Annual Information Technology, Electronics and Mobile Communication Conference (IEMCON).
New technologies in transistors have been proposed by researchers in recent past in order to sustain Moore's Law. Some challenges still persist in these new devices while other challenges were overcome in the process of scaling of transistors. Symmet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::118f3a2999772423cb7a7e16073f78aa
https://doi.org/10.1109/iemcon.2017.8117180
https://doi.org/10.1109/iemcon.2017.8117180
Publikováno v:
NEMS
Symmetric Lateral Bipolar Nano Scale Transistor has emerged as a promising device for future low power digital and mixed signal circuits with application in NEMS. This novel device has shown promising results in terms of Voltage-transfer-characterist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6c26daef8ef408164df622c018712af
https://doi.org/10.1109/nems.2017.8017110
https://doi.org/10.1109/nems.2017.8017110
Publikováno v:
Semiconductor Science and Technology. 34:055019
A novel triple sided charged plasma (3SCP) device structure of a symmetric lateral bipolar transistor (SLBT) on silicon–germanium on insulator (SiGe-OI) is proposed. Charged plasma lateral bipolar transistor on SOI have many advantages especially i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dee5eca6bee9be7f5569bc3c12aabe5
https://doi.org/10.1088/1361-6641/ab10f2
https://doi.org/10.1088/1361-6641/ab10f2
Conference
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Akademický článek
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