Zobrazeno 1 - 7
of 7
pro vyhledávání: '"L. B. Zoccal"'
Autor:
Stanislav Moschkalev, Alfredo R. Vaz, L. B. Zoccal, Silas Demmy Yamamoto, Jacobus W. Swart, José Alexandre Diniz
Publikováno v:
ECS Transactions. 14:131-136
Microwave Integrated Circuit (MIC) technology allows flexibility for customization design, reduced design cost and time-to-market, and adjusting capabilities not enable with MMIC circuits. Development of radio frequency (RF) devices requires adjustin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78da144f7555574ed20d410c6bd26571
https://doi.org/10.1149/1.2956026
https://doi.org/10.1149/1.2956026
Autor:
L. B. Zoccal, Ioshiaki Doi, Jacobus W. Swart, Newton C. Frateschi, Felipe Lorenzo Della Lucia, José Alexandre Diniz
Publikováno v:
ECS Transactions. 14:93-98
This work presents thermal, mechanical and electrical simulations of a microbolometer and the fabrication of the device. It is used ANSYS for the FEM mechanical simulation and ATLAS for the thermal and electrical simulation. The fabrication methods a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08dea62cf0671a868c3fe1fb9d1fe2b9
https://doi.org/10.1149/1.2956021
https://doi.org/10.1149/1.2956021
Publikováno v:
Applied Surface Science. 254:6063-6066
In this paper we have developed a passivation technique with silicon-nitride (SiNX) film that requires no surface pre-treatment, and is fully compatible to monolithic microwave integrated circuits (MMICs). The nitride depositions were carried out by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e27555c5c685d5d7936b924e69052c73
https://doi.org/10.1016/j.apsusc.2008.02.187
https://doi.org/10.1016/j.apsusc.2008.02.187
Publikováno v:
ECS Transactions. 9:159-168
We have developed an excellent quality passivation silicon nitride on GaAs that requires no surface pre-treatment. The silicon nitride film is deposited (by Electron Cyclotron Resonance (ECR) Chemical Vapor Deposition (CVD)) directly over GaAs-n impl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c73ba7a373fe153d118f3b7656be1de9
https://doi.org/10.1149/1.2766885
https://doi.org/10.1149/1.2766885
Autor:
R. A. Flacker, Jacobus W. Swart, L. B. Zoccal, Silas Demmy Yamamoto, José Alexandre Diniz, E. A. Gomes, C. M. Cabreira
Publikováno v:
ECS Transactions. 9:405-414
Thin film multi layer MCM-D (Multi Chip Module Substrate) technology was developed for application on RF (radio-frequency) circuits aiming passive components (capacitors and inductors) and transmission line patterns integration. Metallic layers, usin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2bc298e636f25dbade0492a1a1fb703
https://doi.org/10.1149/1.2766912
https://doi.org/10.1149/1.2766912
Autor:
L. B. Zoccal, Ioshiaki Doi, A. M. Dos Anjos, U. A. Mengui, M. A. Canesqui, José Alexandre Diniz
Publikováno v:
ECS Transactions. 9:269-277
A series of amorphous-SiO2/Ge and amorphous-Si:H/Ge heterostructures with four different layer sequences were grown on p-type Si (001) substrates. Rapid Thermal Annealing (RTA) at 1000{degree sign}C during 40s was used to modify the film structure. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40833756ebfc279ab2fc765c980fc9a1
https://doi.org/10.1149/1.2766898
https://doi.org/10.1149/1.2766898
Autor:
R. A. Flacker, S.D. Yamamoto, E. A. Gomes, C. M. Cabreira, Jacobus W. Swart, L. B. Zoccal, José Alexandre Diniz
Publikováno v:
2007 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference.
Thin film multilayer multi chip module technology (MCM-D) may be used to realize high quality RF (radio-frequency) passive components (capacitors and inductors) and circuits patterns (transmission lines). MCM-D structure is built with metallic and di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90ca307ce3c94b41ad6ba95eda218d79
https://doi.org/10.1109/imoc.2007.4404227
https://doi.org/10.1109/imoc.2007.4404227