Zobrazeno 1 - 10
of 25
pro vyhledávání: '"L. B. La"'
Publikováno v:
Фармакоэкономика, Vol 16, Iss 3, Pp 432-446 (2023)
Background. Ferritin is an important integral and diagnostic marker of liver diseases. In 1/3 of patients with nonalcoholic fatty liver disease (NAFLD), manifestations of hyperferritinemia are revealed. Increased ferritin level indicates the severity
Externí odkaz:
https://doaj.org/article/e714a9a9983e41a8963c02e6cec3589e
Autor:
L. B. Lazarević, G. Knežević, D. Purić, P. Teovanović, M. B. Petrović, M. Ninković, M. Živanović, S. Stanković, M. Branković, P. Lukić, G. Opačić, I. Žeželj
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-13 (2023)
Abstract People resort to various questionable health practices to preserve or regain health - they intentionally do not adhere to medical recommendations (e.g. self-medicate or modify the prescribed therapies; iNAR), or use traditional/complementary
Externí odkaz:
https://doaj.org/article/b4806a07e57047d9b12136a123356a27
Autor:
M. Tiner, L. Prabhu, Chris Hobbs, Philip J. Tobin, J. Conner, S. Bagchi, L. B. La, David Gilmer, Rama I. Hegde, O. Adetutu
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 18:1158-1162
The compatibility of metallic titanium nitride (TiN) as a gate electrode on TiO2 and Ta2O5 gate dielectrics is investigated by rapid thermal annealing (RTA). The electrical and physical properties are characterized using I–V measurements and transm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f020c8e47512bde10d444c331115b4b4
https://doi.org/10.1116/1.582317
https://doi.org/10.1116/1.582317
Autor:
D. Roan, Philip J. Tobin, A. Franke, Chris Hobbs, L. B. La, V. Dhandapani, Rama I. Hegde, Srikanth B. Samavedam, John M. Grant, R. Garcia, Raghaw S. Rai, Dina H. Triyoso, L. Prabhu, B. Taylor, Hsing-Huang Tseng, David Gilmer, R. Cotton
Publikováno v:
Applied Physics Letters. 81:1288-1290
Polycrystalline-silicon (poly-Si) gate compatibility issues with HfO2 and Al2O3 capped HfO2 gate dielectrics are reported. It can be generally stated that chemical vapor deposition (CVD) silicon gates using silane deposited directly onto HfO2 results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3ea0836ca4bc64c4ca647478b84d60b
https://doi.org/10.1063/1.1499514
https://doi.org/10.1063/1.1499514
Autor:
S. Dakshina-Murthy, Bich-Yen Nguyen, J. Mogab, M. Moosa, W. Taylor, Ryan Martin, John M. Grant, H.-H. Tseng, S. Bagchi, Rama I. Hegde, M. Zavala, P. Abramowitz, David Gilmer, Philip J. Tobin, E. Luckowski, J. Schaeffer, R. Garcia, O. Adetutu, Chris Hobbs, M. Azrak, J. A. Smith, T. Y. Luo, V. Dhandapani, V. Arunachalam, L. B. La, L. Hebert, S. Samavedam
Publikováno v:
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
We report for the first time electrical characterization of HfO/sub 2/ p- and n-MOSFETs with CVD TiN and PVD TaSiN gates respectively fabricated using conventional CMOS integration. Their performance is compared to PVD TiN-gated HfO/sub 2/ and SiO/su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba8e49c7a4782265a3bd499bd62e2e9c
https://doi.org/10.1109/vlsit.2002.1015373
https://doi.org/10.1109/vlsit.2002.1015373
Autor:
O. Adetutu, Christopher C. Hobbs, B. Maiti, David Gilmer, L. Grove, H.-H. Tseng, D. Weddington, Kimberly G. Reid, R. Nagabushnam, Philip J. Tobin, Marc A. Rossow, Rama I. Hegde, L. B. La, F. Huang, D. O'Meara
Publikováno v:
1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).
We report here for the first time the integration of sub-quarter micron CMOSFETs on bulk silicon using an oxidized metal gate dielectric. A polysilicon capped physical vapor deposited (PVD) titanium nitride (TiN) was used as the gate electrode. Well
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b05d77bbce338917ae67be5aa411b23
https://doi.org/10.1109/vlsit.1999.799379
https://doi.org/10.1109/vlsit.1999.799379
Autor:
D. Roan, C. Garza, Ran Liu, Raj Rai, J. Baker, Rama I. Hegde, T. Guenther, B. E. White, L. B. La, Dina H. Triyoso, M. Ramon, D. Werho, J. M. Grant, Philip J. Tobin, Peter Fejes
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22:2121
In this article, we report film properties of HfO2 and La2O3 gate dielectrics grown on Si(100) substrate using atomic layer deposition (ALD) with various surfaces modified before film growth. The precursors used for HfO2 and La2O3 films are hafnium t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac874a1054668db4b7c58df7e70c5660
https://doi.org/10.1116/1.1773840
https://doi.org/10.1116/1.1773840
Autor:
Mark V. Raymond, J. A. Smith, S. B. Samavedam, Ryan Martin, David Gilmer, V. Dhandapani, M. Kottke, M. Zavala, J. Mogab, Raj Rai, Bich-Yen Nguyen, S. Dakshina-Murthy, J. K. Schaeffer, Philip J. Tobin, Rich Gregory, D. Roan, R. Garcia, Z. X. Jiang, L. B. La, B. E. White
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21:11
As the metal–oxide–semiconductor field-effect transistor (MOSFET) gate lengths scale down to 50 nm and below, the expected increase in gate leakage will be countered by the use of a high dielectric constant (high-k) gate oxide. The series capacit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f6579a0e1e95793cdc0dccd7f1c9d90
https://doi.org/10.1116/1.1529650
https://doi.org/10.1116/1.1529650
Publikováno v:
Кардиоваскулярная терапия и профилактика, Vol 8, Iss 3, Pp 69-77 (2009)
Aim. To study clinical, functional, morphological and pharmacological features of hepatic pathology in patients with non-alcohol hepatic steatosis (NAHS), combined with atherogenic dyslipidemia (ADL) and/or insulin resistance (IR).Material and method
Externí odkaz:
https://doaj.org/article/7ce827398b03452fb06b3cc0922ba14c
Publikováno v:
Тонкие химические технологии, Vol 3, Iss 3, Pp 53-60 (2008)
The application of ozone as initiator of cumene oxidation is shown to result in feed conversion increased to 28%, with selectivity closed to 100%, instead of accordingly 21% and 88% in method using cumene hydroperoxide as initiator. Optimal condition
Externí odkaz:
https://doaj.org/article/414761ca6d534c10a6e243ce5c8d8215