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pro vyhledávání: '"L. B. Bhat"'
Publikováno v:
MRS Proceedings. 242
Organometallic vapor phase epitaxial (OM VPE) growth of ZnSe on GaAs was carried out using dimethylzinc (DMZn) and dimethylselenium (DMSe) as source precursors. The growth of ZnSe can be initiated either by introducing DMZn first (Zn stabilized) or D
Publikováno v:
MRS Proceedings. 242
Spectroscopie ellipsometry is a well developed technique for studying the semiconductor materials and heterostructures. Here, we have applied this technique to in-situ studies of ZnSe and ZnCdSe growth in a low pressure organometallic vapor phase epi