Zobrazeno 1 - 8
of 8
pro vyhledávání: '"L. B. Berliner"'
Publikováno v:
Тонкие химические технологии, Vol 10, Iss 3, Pp 70-76 (2015)
An information-calculating system (ICS) that allows computer simulation of processes of semiconductor technology associated with the formation of single crystals and epitaxial heterostructures based on semiconductor AIIIBV compounds was developed. Th
Externí odkaz:
https://doaj.org/article/d3b8dbcbd5fd4aca84abc2bd100c3a21
Publikováno v:
Тонкие химические технологии, Vol 8, Iss 4, Pp 85-91 (2013)
A three-dimensional (3D) detailed heat, mass and momentum transfer model was constructed to describe the thermal behavior, fluid dynamics and the diffusion in a horizontal metal-organic vapor-phase epitaxy (MOVPE) reactor with a rectangular section a
Externí odkaz:
https://doaj.org/article/3b0da90e75f04b4696b46bae14c4dbcc
Autor:
L. B. Berliner, L. A. Gvelesiani
Publikováno v:
Тонкие химические технологии, Vol 6, Iss 2, Pp 86-93 (2011)
Computation method of the radiative heattransfer and free convection in the growth ampoule was suggested. It is based on numeric computation of two phase problem with unknown shape of interface. Computation was realized in two steps: on the first ste
Externí odkaz:
https://doaj.org/article/8ba18eec4c9b4c7b9dc55066951ecbe7
Autor:
L. B. Berliner, L. A. Gvelesiani
Publikováno v:
Тонкие химические технологии, Vol 5, Iss 5, Pp 13-18 (2010)
A method for the computation of radiative heat transfer was suggested. It is based on numeric computation of heat flows from the muffle walls with a specified temperature to the ampoule walls with a temperature that needs to be estimated. The computa
Externí odkaz:
https://doaj.org/article/ec8bb5bdcc364fd68446a0e109b982cd
Autor:
A. A. Marmalyuk, M. A. Surnina, E. G. Gordeev, I. A. Boginskaya, R. Kh. Akchurin, M. A. Ladugin, E. V. Egorova, L. B. Berliner
Publikováno v:
Technical Physics. 59:78-84
The first stage of formation of InAs/GaAs quantum-dot heterostructures by droplet epitaxy is investigated. Factors influencing the geometrical size and density of arrays of indium nanodrops deposited by trimethylindium pyrolysis on the GaAs(100) subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::723e2beb8df661191eb1a79c6495348a
https://doi.org/10.1134/s1063784214010034
https://doi.org/10.1134/s1063784214010034
Publikováno v:
Thin Solid Films. 518:2105-2114
An advanced model for simulation of In segregation phenomena, stress and strain distribution during metal–organic chemical vapor deposition of InGaAs/GaAs(100) quantum well (QW) heterostructures based on representation of boundary gas layer as “q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23e5674535ad43d9f378da60693d9584
https://doi.org/10.1016/j.tsf.2009.06.035
https://doi.org/10.1016/j.tsf.2009.06.035
Autor:
A. A. Marmalyuk, L. B. Berliner, O. I. Govorkov, A. Yu. Andreev, A. A. Padalitsa, A. A. Maldzhy, D. R. Sabitov, A. V. Petrovsky, V P Duraev, A V Sukharev, R. Kh. Akchurin
Publikováno v:
Semiconductors. 43:63-68
Surface segregation during epitaxial growth of stressed InGaAs/GaAs quantum-well heterostructures significantly distorts the nominal concentration profile of quantum wells. The consideration of the effect for growth conditions and elastic stresses ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2884eaf7945051fc5c1970ed8bb0cb99
https://doi.org/10.1134/s1063782609010138
https://doi.org/10.1134/s1063782609010138
Publikováno v:
Technical Physics. 52:345-351
A new approach to describe phenomena attendant on the growth of thin InGaAs epitaxial layers by hydride MOCVD in terms of which the boundary gas layer is considered as quasi-liquid is suggested. A numerical model for simulating the concentration prof
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc64cac1ba5eb55f05b9228827a27de8
https://doi.org/10.1134/s1063784207030103
https://doi.org/10.1134/s1063784207030103