Zobrazeno 1 - 10
of 91
pro vyhledávání: '"L. Altimime"'
Autor:
Y. Y. Chen, Sofie Mertens, Stefan Kubicek, Dirk Wouters, V.V. Afanasiev, Guido Groeseneken, J. Swerts, Bogdan Govoreanu, Ludovic Goux, Jorge A. Kittl, N. Jossart, Luigi Pantisano, B. Verbrugge, X.P. Wang, Vasile Paraschiv, Robin Degraeve, L. Altimime, Christoph Adelmann, Malgorzata Jurczak
Publikováno v:
Microelectronic Engineering. 112:92-96
We proposed a new, simpler, and fully BEOL CMOS-compatible TiN/HfO2/TiN RRAM stack using the Plasma Enhanced Atomic Layer Deposition (PEALD) for the top-electrode TiN processing, demonstrating attractive bipolar switching properties (by positive RESE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b17de830cb523924693773e927aaeb2
https://doi.org/10.1016/j.mee.2013.02.087
https://doi.org/10.1016/j.mee.2013.02.087
Autor:
Malgorzata Jurczak, Jorge A. Kittl, Robin Degraeve, Gouri Sankar Kar, Dirk Wouters, Guido Groeseneken, Bogdan Govoreanu, Yang Yin Chen, L. Altimime, Andrea Fantini, Ludovic Goux
Publikováno v:
IEEE Transactions on Electron Devices. 59:3243-3249
By tuning the SET/RESET pulse amplitude conditions, the pulse endurance of our 40-nm HfO2/Hf 1T1R resistive-random-access-memory devices demonstrates varying failure behaviors after 106 cycles. For unbalanced SET/RESET pulse amplitude conditions, bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4044416815e816a8e050104b76c5096
https://doi.org/10.1109/ted.2012.2218607
https://doi.org/10.1109/ted.2012.2218607
Autor:
Ingrid Debusschere, Geert Van den bosch, Antonio Arreghini, L. Altimime, Gouri Sankar Kar, Jan Van Houdt
Publikováno v:
ECS Transactions. 44:431-437
Highly scaled vertical cylindrical cell with 22nm diameter bi-layer poly-silicon channel for 3D NAND Flash memory is successfully developed. A thin amorphous silicon layer along with the oxide-nitride-oxide (ONO) gate stack inside the memory hole was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a71e73f93c50b720fa7dca360ca859f1
https://doi.org/10.1149/1.3694351
https://doi.org/10.1149/1.3694351
Autor:
M. A. Pawlak, Mihaela Popovici, Minsoo Kim, Jorge A. Kittl, Annelies Delabie, Johan Swerts, Karl Opsomer, L. Altimime, M.M. Salimullah, M. Schaekers, B. Kaczer, K. Tomida, Ingrid Debusschere, Sven Van Elshocht, Christa Vrancken
Publikováno v:
ECS Transactions. 41:41-51
A comparative study of the growth behavior of nm-thin ruthenium layers by plasma enhanced atomic layer deposition using two ruthenium precursors is discussed. For bis(ethylcyclopentadienyl)-ruthenium or Ru(EtCp)2, we have found a large incubation tim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29bfe51bb3ba6181ef27959ec14304aa
https://doi.org/10.1149/1.3633653
https://doi.org/10.1149/1.3633653
Autor:
Alain Moussa, Hugo Bender, Jorge A. Kittl, Olivier Richard, L. Altimime, Mihaela Popovici, Johan Swerts, Thierry Conard, Sven Van Elshocht, Alexis Franquet, Hilde Tielens, K. Tomida, Min-Soo Kim
Publikováno v:
Microelectronic Engineering. 88:1517-1520
Downscaling of the metal-insulator-metal capacitor (MIMCAP) for Dynamic Random Access Memory (DRAM) requires the introduction of high permittivity dielectrics. MIMCAP structures formed with RuO"2/Ru as bottom electrode, rutile TiO"2 as dielectric and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3df3e533ea4ebaa7f8e9c43d522d78d9
https://doi.org/10.1016/j.mee.2011.03.063
https://doi.org/10.1016/j.mee.2011.03.063
Autor:
Min-Soo Kim, L. Altimime, Jorge A. Kittl, Mihaela Popovici, Sven Van Elshocht, K. Tomida, Hugo Bender, Ben Kaczer, Christoph Adelmann, M. A. Pawlak, Hilde Tielens, Johan Swerts, Bert Brijs, Annelies Delabie, Paola Favia
Publikováno v:
physica status solidi (a). 208:1920-1924
SrTiO3 (STO) films were grown by atomic layer deposition (ALD) on TiN using Sr(t-Bu3Cp)2, Ti(OCH3)4 and H2O. After crystallization anneal, large single crystals grains were obtained and nanocracks were present. The microstructure can be changed using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::293d5de60329dbc48c08a2f660258ab2
https://doi.org/10.1002/pssa.201026710
https://doi.org/10.1002/pssa.201026710
Autor:
Michael Kund, Heinz Hoenigschmid, L. Altimime, Ralf Symanczyk, D. Gogl, G. Mueller, Michael Markert, Corvin Liaw, S. Bournat, Stefan Dietrich, Michael Angerbauer, Milena Ivanov
Publikováno v:
IEEE Journal of Solid-State Circuits. 42:839-845
A 2-Mbit CBRAM (Conductive Bridging Random Access Memory) core has been developed utilizing a 90 nm, VDD=1.5 V process technology. The presented design uses an 8F2 (0.0648 mum2) 1T1CBJ (1-Transistor/1-Conductive Bridging Junction) cell and introduces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41cb722e03cf911a997612774aadb503
https://doi.org/10.1109/jssc.2007.892207
https://doi.org/10.1109/jssc.2007.892207
Autor:
Nadine Collaert, Marc Aoulaiche, Malgorzata Jurczak, Guido Groeseneken, Robin Degraeve, Bart De Wachter, Zhichao Lu, L. Altimime
Publikováno v:
IEEE Electron Device Letters. 31:1380-1382
In this letter, endurance is investigated on one bulk FinFET transistor capacitorless random access memory, using the bipolar junction transistor (BJT) programming mode. For the first time, it is shown that endurance is an issue using the BJT-mode pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68d7715a8bd4c1e3125a5dc507116fa2
https://doi.org/10.1109/led.2010.2079313
https://doi.org/10.1109/led.2010.2079313
Autor:
K. Tomida, Olivier Richard, Alain Moussa, Ben Kaczer, D. Radisic, M. A. Pawlak, Mihaela Popovici, Christa Vrancken, Min-Soo Kim, Johan Swerts, Sven Van Elshocht, Karl Opsomer, L. Altimime, Alexis Franquet, Marc Schaekers, Hugo Bender, Jorge A. Kittl, Annelies Delabie
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 5:19-21
Crystalline rutile TiO2 films were grown by atomic layer deposition on oxidized Ru electrodes using a titanium methoxide as the metal precursor and O3 as the oxidant. A protective layer of ∼0.3 nm TiO2 grown with H2O as the oxidant was first deposi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38aa93b88c282f47c54bd2ba3a568894
https://doi.org/10.1002/pssr.201004462
https://doi.org/10.1002/pssr.201004462
Autor:
Iuliana Radu, Bogdan Govoreanu, Robin Degraeve, J.-C Liu, Y. Y. Chen, Dirk Wouters, Leqi Zhang, A. Ajaykumar, Naga Raghavan, Ludovic Goux, Malgorzata Jurczak, W. Kim, Sergiu Clima, Andrea Fantini, H. Lipowicz, L. Altimime, Gouri Sankar Kar, Augusto Redolfi
Publikováno v:
2013 5th IEEE International Memory Workshop.
We report on the performance and reliability of the Hf/HfO2 RRAM cell with Ultra-Thin Oxide (UTO-RRAM). We show that cells with an oxide thickness of 3 nm have basic performance (including speed, switching voltages, and the on/off window) similar to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3817ff8f43e30760aef892403e236b9
https://doi.org/10.1109/imw.2013.6582095
https://doi.org/10.1109/imw.2013.6582095