Zobrazeno 1 - 10
of 12
pro vyhledávání: '"L. A. Saypulaeva"'
Autor:
L. A. Saypulaeva, A. G. Alibekov, N. V. Melnikova, A. N. Babushkin, A. V. Tebenkov, V. S. Zakhvalinskii, A. I. Ril’, S. F. Marenkin, M. M. Gadzhialiev
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 17:291-297
Autor:
L. A. Saypulaeva, A. G. Alibekov, N. V. Melnikova, G. V. Sukhanova, A. V. Tebenkov, A. N. Babushkin, M. M. Gadzhialiev, V. S. Zakhvalinskii, A. I. Ril, S. F. Marenkin
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 16:390-396
Autor:
L. A. Saypulaeva, K. Sh. Khizriev, N. V. Melnikova, A. V. Tebenkov, A. N. Babushkin, V. S. Zakhvalinskii, A. I. Ril, S. F. Marenkin, M. M. Gadjialiev, Z. Sh. Pirmagomedov
Publikováno v:
Physics of the Solid State. 63:1301-1304
Autor:
L. A. Saypulaeva, S. F. Marenkin, M. M. Gadzhialiev, A. I. Ril, N. V. Melnikova, Z. Sh. Pirmagomedov, V. S. Zakhvalinskii, A. G. Alibekov
Publikováno v:
Physics of the Solid State. 63:644-649
Autor:
A. G. Alibekov, V. S. Zakhvalinskii, N. V. Melnikova, M. M. Gadzhialiev, A. N. Babushkin, S. F. Marenkin, A. I. Ril, L. A. Saypulaeva
Publikováno v:
Phys. Solid State
Physics of the Solid State
Physics of the Solid State
The pressure dependences of electrical resistance, Hall coefficient, charge carrier mobilities, and magnetoresistance of the Cd3As2–20 mol % MnAs composite are investigated at pressures up to 9 GPa. The pressure dependences of all the listed proper
Autor:
T. N. Efendieva, N. V. Melnikova, L. A. Saypulaeva, M. M. Gadzhialiev, I. V. Fedorchenko, A. I. Ril, S. F. Marenkin, A. Yu. Mollaev, V. S. Zakhvalinskii, A. G. Alibekov
Publikováno v:
Inorganic Materials. 55:873-878
We have studied the effect of hydrostatic pressure on the galvanomagnetic properties of a Cd3As2 + 20 mol % MnAs alloy in a transverse magnetic field of up to 4 kOe. The pressure dependences of the Hall coefficient and resistivity for the alloy provi
Autor:
S. F. Marenkin, N. V. Melnikova, M. M. Gadzhialiev, L. A. Saypulaeva, Z. Sh. Pirmagomedov, Sh. B. Abdulvagidov, A. G. Alibekov, V.S. Zakhvalinsky
Publikováno v:
Herald of Dagestan State University. 34:22-29
Publikováno v:
Applied Physics Letters. 120:202406
Considerable interest to magnetism of MnAs both in bulk or in the form of epitaxial films is stimulated by its applications as a magnetocaloric material and in spintronic devices. Since the MnAs films deposited on GaAs reproduce well a magnetic trans
Autor:
R. M. Ferzaliev, O. L. Kheifets, L. A. Saypulaeva, A. N. Babushkin, S. N. Kallaev, A. Yu. Mollaev, A. G. Alibekov, N. V. Melnikova
Publikováno v:
Physics of the Solid State. 53:2476-2479
The electrical properties of the chalcogenide AgSnSbSe3 have been investigated over a wide range of variations in external parameters, such as the temperature, the pressure, and the frequency of the electric field. It has been found that the temperat
Publikováno v:
Semiconductors. 43:701-705
The resistivity and Hall coefficient in n-CdAs2 and p-ZnAs2 are measured at room temperature under a hydrostatic pressure as high as 9 GPa and quasi-hydrostatic pressure as high as 50 GPa. For n-CdAs2, the phase transition is found at P = 5.5 GPa, an