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Autor:
A.P. Litovchenko, W. Wahl, G.G. Shmatko, J. Wyss, M. B. Pinkovska, A. A. Groza, V. I. Khivrich, M. I. Starchik, V. I. Varnina, P.G. Litovchenko, D. Bisello, L. A. Polivzev, A. Candelori
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 514:44-46
In silicon material with oxygen concentration in the range (4–9)×10 17 cm −3 , grown by the CZ method and irradiated by reactor neutrons, the interstitial oxygen mainly participates in A-center (V+O) creation. A-center concentration is linearly