Zobrazeno 1 - 4
of 4
pro vyhledávání: '"L. A. Marasina"'
Publikováno v:
Kristall und Technik. 12:541-545
The epitaxial growth of InN by the open tube flow method using the interaction of InCl3 and NH3 is discussed. The influence of various technological parameters on the process and structure perfection of the epitaxial layers, grown on the single cryst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::002d0b8dddaf898d7c9e7290dbdec7bc
https://doi.org/10.1002/crat.19770120603
https://doi.org/10.1002/crat.19770120603
Publikováno v:
Crystal Research and Technology. 17:835-840
The growth kinetics of GaN on Sapphire was analyed on the base of some experimental data such as: the growth rate temperature depandence, on the base of some experimental data such as: the growth rate temperature dependence, the grwoth rate dependenc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8341b5396e37fab6dd61212823557d71
https://doi.org/10.1002/crat.2170170708
https://doi.org/10.1002/crat.2170170708
Publikováno v:
Crystal Research and Technology. 17:365-371
The results on etching of sapphire substrates with different orientation are discussed. High temperature etching in hydrogen stream and etching in the mixture of H3PO4 and H2SO4 were used in experiments. The relation of etching rates for different sa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::866b82339e0360a143659d83cc3ea7cd
https://doi.org/10.1002/crat.2170170320
https://doi.org/10.1002/crat.2170170320
Publikováno v:
Physica Status Solidi (a). 38:753-760
Luminescence of GaN epitaxial layers grown by decomposition of complex gallium chloride ammonide GaCl3. NH3 in N2-ambient is discussed. Zn doping results in an intensive emission peak at (2.87 ± 0.02) eV with a halfwidth of about 0.4 eV. A correlati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e193635a64a4887b2ed5fcf69f732dbd
https://doi.org/10.1002/pssa.2210380238
https://doi.org/10.1002/pssa.2210380238