Zobrazeno 1 - 10
of 32
pro vyhledávání: '"L. A. Koszi"'
Publikováno v:
Applied Physics Letters. 62:3408-3410
The microstructure of semiconductor laser diodes is studied using a combination of focused ion beam sputtering, electroluminescence imaging, and cross‐sectional transmission electron microscopy. Careful control of focused ion beam sputtering allows
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3227ab306012f985b5b3050ad3ec9c6c
https://doi.org/10.1063/1.109032
https://doi.org/10.1063/1.109032
Autor:
L. A. Koszi, R. L. Hartman
Publikováno v:
Journal of Applied Physics. 49:5731-5744
The spontaneous radiation generated in the active region of (Al,Ga)As double‐heterostructure (DH) proton‐delineated stripe‐geometry lasers has been studied by measuring the luminescence (Ls) emitted from a window fabricated in the metallization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8aa69f7667dd89d827120985909e3feb
https://doi.org/10.1063/1.324592
https://doi.org/10.1063/1.324592
Autor:
D. L. Rode, L. A. Koszi
Publikováno v:
Journal of The Electrochemical Society. 122:1676-1680
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1307701859d783b4b9d92a9952d2ef9
https://doi.org/10.1149/1.2134108
https://doi.org/10.1149/1.2134108
Publikováno v:
Journal of Applied Physics. 66:1849-1854
We report the results of the measurement of radius of curvature of 1.3 and 1.5 μm wavelength GaInAsP‐InP channeled substrate buried heterostructure lasers. The objective of this investigation is to quantify the macroscopic stress present in the de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bca6035545f6ade60f4aa855ba19231b
https://doi.org/10.1063/1.344358
https://doi.org/10.1063/1.344358
Publikováno v:
Journal of Applied Physics. 48:3510-3513
Complex refractive‐index and dielectric function data are given for anodically grown native oxides on GaP, GaAs, and GaSb from 1.5 to 6.0 eV. The absorption thresholds for the oxides on GaAs and GaSb occur at 5.0 and 4.2 eV, respectively, with weak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7d6f72bdad5f738a9f7bc222228fa010
https://doi.org/10.1063/1.324200
https://doi.org/10.1063/1.324200
Publikováno v:
IEEE Transactions on Electron Devices. 22:701-706
An ac or dc GaP LED array has been designed and fabricated which has potential as a direct replacement for several tungsten filament lamps and as an illuminator for new design considerations. In designing such an LED for high-voltage application, ser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7070a6a0edceaaca3160701ad15b639e
https://doi.org/10.1109/t-ed.1975.18206
https://doi.org/10.1109/t-ed.1975.18206
Publikováno v:
Journal of Applied Physics. 50:4616-4619
Forty‐seven strip‐buried‐heterostructure (Al,Ga)As lasers have been examined for pulsations and absorbing defects in the active volume. All 18 pulsating lasers were found to have defects while only one of the 29 nonpulsating lasers had a visibl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74ef72ad43b976b2aaa9dbaf98775ab5
https://doi.org/10.1063/1.326571
https://doi.org/10.1063/1.326571
Publikováno v:
Journal of Applied Physics. 54:3763-3768
We have studied Au bonding pad induced stresses in (AlGa)As double heterostructure lasers by photoluminescence, x‐ray Automatic Bragg Angle Control measurements, and infrared and optical microscopy. Examination of several devices which have thick (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dbfc397a7f1fb6e848c4200ca8745d5f
https://doi.org/10.1063/1.332592
https://doi.org/10.1063/1.332592
Autor:
J. W. Lee, Avishay Katz, L. A. Koszi, R. L. Brown, A. Lahav, P. M. Thomas, William Cross Dautremont-Smith, J. L. Zilko, V. G. Riggs
Publikováno v:
Journal of Applied Physics. 65:4319-4323
Nonalloyed ohmic contacts of Pt/Ti to 5×1018 cm−3 doped p‐InGaAsP (λg =1.3 μm) have been fabricated by rapid thermal processing of sputtered and e‐gun‐deposited metallizations. While the former as‐deposited had a rectifying characteristi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::717e14c0bf1ce1ab3202cfff715ad212
https://doi.org/10.1063/1.343291
https://doi.org/10.1063/1.343291
Autor:
B. P. Segner, S. G. Napholtz, Henryk Temkin, L. A. Koszi, E. J. Flynn, L. J. P. Ketelsen, G. J. Przybylek
Publikováno v:
Journal of Applied Physics. 64:3718-3721
An InP/InGaAsP laser‐monitor hybrid structure which demonstrates the use of channeled‐substrate buried‐heterostructure lasers or broad area double heterostructure devices as ‘‘on‐board’’ edge‐detecting back‐face monitors is presen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70d331ed24b481f584e0e04ebef8ce52
https://doi.org/10.1063/1.341415
https://doi.org/10.1063/1.341415