Zobrazeno 1 - 10
of 115
pro vyhledávání: '"L. A. Kosyachenko"'
Publikováno v:
Semiconductors. 50:508-516
Optical and recombination losses in a Cu(In,Ga)Se2 thin-film solar cell with a band gap of 1.36–1.38 eV are theoretically analyzed. The optical transmittance of the ZnO and CdS layers through which the radiation penetrates into the absorbing layer
Autor:
Valery M. Sklyarchuk, O. L. Maslyanchuk, E. V. Grushko, Toru Aoki, L. A. Kosyachenko, S. V. Melnychuk
Publikováno v:
Ukrainian Journal of Physics; Vol. 59 No. 1 (2014); 17
Український фізичний журнал; Том 59 № 1 (2014); 17
Scopus-Elsevier
Український фізичний журнал; Том 59 № 1 (2014); 17
Scopus-Elsevier
Electric parameters of chlorine-doped CdTe crystals with a resistivity of (3÷6)× ×10^9 Ω·cm have been studied. The heavily doped material was characterized by an almost intrinsic conductivity, which is explained on the basis of the charge-carrie
Autor:
Valeriy M. Sklyarchuk, P. M. Fochuk, V. P. Kladko, A. Medvid, Yevgeniy Nikonyuk, Ilariy Rarenko, Volodymyr Koshkin, Sergiy Budzulyak, A. I. Rarenko, Edvins Dauksta, Z. I. Zakharuk, Nadiya Vakhnyak, D. V. Korbutyak, L. A. Kosyachenko, Lubomyr Demchyna, Boris Danilchenko, Sergey Dremlyuzhenko
Publikováno v:
Advanced Materials Research. 1117:107-113
Semiconductor Hg3In2Te6 crystals and their analogous are solid solutions of In2Te3 and HgTe. Hg3In2Te6 crystals are congruently melted as chemical compound. Like In2Te3 the Hg3In2Te6 crystal has cubic crystal lattice with stoichiometric vacancies in
Autor:
G. V. Lashkarev, I. I. Shteplyuk, V. M. Tkach, A. I. Ievtushenko, T. Sh. Osmanov, L. A. Kosyachenko, V. I. Lazorenko
Publikováno v:
Sensor Electronics and Microsystem Technologies. 7:36-41
Publikováno v:
Solar Energy Materials and Solar Cells. 130:291-302
Optical and recombination losses in thin-film solar cells based on CuIn x Ga 1-x Se 2 with the bandgaps 1.14–1.16 and 1.36–1.38 eV have been evaluated. Parameters used for the analysis and calculations were verified by comparing the measured quan
Autor:
Xavier Mathew, O. L. Maslyanchuk, I. M. Fodchuk, L. A. Kosyachenko, T.I. Mykytyuk, Omar S. Martinez, E.R. Pérez
Publikováno v:
Solar Energy. 109:144-152
Charge transport mechanism in thin-film CdS/Cd 1− x Mg x Te ( x = 0.08) heterostructure are investigated. It is shown that the measured I – V characteristics and their temperature dependence are described well in terms of the Sah–Noyce–Shockl
Publikováno v:
physica status solidi c. 11:1519-1522
The conductivity of semi-insulating Cl-doped CdTe crystals produced by Acrorad Co. Ltd. with a resistivity ρ = (3-6)×109 Ω·cm (300 K) was investigated. It is shown that the Fermi level in the band gap is located below the Fermi level in intrinsic
Autor:
Toshihiko Toyama, L. A. Kosyachenko
Publikováno v:
Solar Energy Materials and Solar Cells. 120:512-520
A comparison of the calculated results with the experimental data shows that the measured dark I–V characteristics of efficient thin-film CdS/CdTe cells are quantitatively described in terms of the Sah – Noyce – Shockley theory of generation
Autor:
L. A. Kosyachenko, Valery M. Sklyarchuk, O. F. Sklyarchuk, Toru Aoki, O. L. Maslyanchuk, Akifumi Koike, E. V. Grushko, C. P. Lambropoulos, Volodymyr A. Gnatyuk
Publikováno v:
IEEE Transactions on Nuclear Science. 60:2845-2852
Schottky diode X/γ-ray detectors based on semiinsulating CI-doped CdTe crystals have been developed and investigated. Both the Schottky and Ohmic contacts were formed by vacuum deposition of Ni electrodes on the opposite faces of (111) oriented CdTe
Publikováno v:
Solar Energy Materials and Solar Cells. 114:179-185
Calculations of the integrated absorptive capacity of CdTe layer taking into account the spectral distributions of the standard AM1.5 solar radiation and the absorption coefficient of the material have been carried out. It is shown that the complete