Zobrazeno 1 - 8
of 8
pro vyhledávání: '"L. A. Gruezke"'
Autor:
Francisco M. Soares, Nicolas K. Fontaine, Ryan P. Scott, J. H. Baek, X. Zhou, T. Su, S. Cheung, Y. Wang, C. Junesand, S. Lourdudoss, K. Y. Liou, R. A. Hamm, W. Wang, B. Patel, L. A. Gruezke, W. T. Tsang, Jonathan P. Heritage, S. J. B. Yoo
Publikováno v:
IEEE Photonics Journal, Vol 3, Iss 6, Pp 975-985 (2011)
We demonstrate monolithic integration of a 100-channel arrayed-waveguide grating (AWG) with 10-GHz channel spacing and 100 optically controlled Michelson-interferometer-based phase and amplitude modulators. The high-resolution AWG showed better than
Externí odkaz:
https://doaj.org/article/f4aa991e35534466a594e800a7fa8a3c
Autor:
T.L. Pernell, Joseph Michael Freund, J.L. Lentz, J.E. Johnson, Roosevelt People, S.K. Sputz, F.S. Walters, S.N.G. Chu, M.W. Focht, L. A. Gruezke, L.J.P. Ketelsen, D. V. Stampone, D.M. Romero, L.J. Peticolas, L. E. Smith, G.J. Przybylek, J.A. Grenko, N.N. Tzafaras, C.L. Reynolds, Muhammad A. Alam, K.G. Glogovsky, J.M. Vandenberg, L.C. Luther
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 6:19-25
We have demonstrated a semiconductor optical amplifier and electroabsorption modulator monolithically integrated with a novel dual-waveguide spot-size converter at the input for low-loss coupling to planar lightguide circuit silica waveguides or clea
Autor:
F. M. Soares, J. H. Baek, N. K. Fontaine, X. Zhou, Y. Wang, R. P. Scott, J. P. Heritage, C. Junesand, S. Lourdudoss, K. Y. Liou, R. A. Hamm, W. Wang, B. Patel, S. Vatanapradit, L. A. Gruezke, W. T. Tsang, S. J. B. Yoo
Publikováno v:
Optical Fiber Communication Conference.
We discuss monolithic integration of a 100-channel AWG with a 10-GHz channel spacing with 100 Michelson-interferometer-based phase- and amplitude-modulators. The AWG showed approximately 10 dB crosstalk, and the twin-integrated devices comprise a 2
Autor:
B. F. Levine, C. A. King, Aaron R. Hawkins, B. J. Tseng, R. W. Johnson, D. R. Zolnowski, L. A. Gruezke, John E. Bowers, S. Hiu
Publikováno v:
Applied Physics Letters. 70:2449-2451
Planar Si/InGaAs wafer fused p-i-n photodetectors were fabricated and measured. They show high internal quantum efficiency, high speed, record low dark current, and no evidence of charge trapping, recombination centers, or a bandgap discontinuity at
Autor:
S.J. Wang, J.D. Wynn, M.S. Lin, R. L. Brown, C.Y. Kuo, Niloy K. Dutta, L. A. Gruezke, Y. Twu, K. E. Strege
Publikováno v:
Electronics Letters. 26:708-710
The fabrication and performance characteristics of 1 mm long three-electrode distributed feedback lasers is reported. CW linewidth of 500 kHz has been obtained. The frequency modulation characteristics of these devices exhibit no thermally induced di
Autor:
S. J. Yoo, J. P. Heritage, V. J. Hernandez, R. P. Scott, W. Cong, N. K. Fontaine, R. G. Broeke, J. Cao, S.-W. Seo, J.-H. Baek, F. M. Soares, Y. Du, C. Yang, W. Jiang, K. Aihara, Z. Ding, B. H. Kolner, Anh-Vu Pham, Shu Lin, F. Olsson, S. Lourdudoss, K. Y. Liou, S. N. Chu, R. A. Hamm, B. Patel, W. S. Hobson, J. R. Lothian, S. Vatanapradit, L. A. Gruezke, W. T. Tsang, M. Shearn, A. Scherer
Publikováno v:
Journal of Optical Networking. 6:1210
We overview and summarize the progress of the spectral phase encoded time spreading (SPECTS) optical code division multiple access (O-CDMA) technology. Recent progress included a demonstration of a ...
Autor:
J. P. BLAHA, K. E. STREGE, J. L. ZILKO, L. J. -P. KETELSEN, M. W. FOCHT, V. G. RIGGS, L. A. GRUEZKE, S. N. G. CHU, S. Y. LEUNG, S. A. KEESSER
Publikováno v:
Optical Fiber Communication Conference.
We report the growth and fabrication of low-threshold high-power high-yield single-longitudinal 1.3-μm InGaAsP/lnP capped mesa buried heterostructure (CMBH) lasers by a combination of hydride and organometallic vapor phase epitaxial techniques. Usin
Autor:
John E. Bowers, D. R. Zolnowski, C. A. King, B. F. Levine, B. J. Tseng, R. W. Johnson, L. A. Gruezke, Aaron R. Hawkins, S. Hiu, J. P. Reilley
Publikováno v:
Scopus-Elsevier
A detailed study of the important role of temperature and gas ambient on the bonding between Si and InGaAs wafers was performed. The heterointerface was characterized by fabricating p-i-n photodetectors and measuring the forward and reverse currents,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba0cf233b7c85ed3b8180d135ab19328
http://www.scopus.com/inward/record.url?eid=2-s2.0-0031572096&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0031572096&partnerID=MN8TOARS