Zobrazeno 1 - 10
of 35
pro vyhledávání: '"L. A. Balagurov"'
Publikováno v:
Russian Microelectronics. 42:492-497
Nanoporous and nanotubular titanium layers have been obtained via electrolytic etching in a mixed organic-inorganic electrolyte. The formation of layers has been studied in situ by electrochemical impedance spectroscopy. It has been shown that the im
Publikováno v:
Russian Microelectronics. 41:503-507
Much attention to electrical properties of titanium dioxide is due to the fact that it has recently started to be used in the manufacture of various electronic devices. Temperature dependences of the directcurrent (DC) and alternating-current (AC) co
Autor:
Andrei Rogalev, Andrei V. Sapelkin, E. A. Gan’shina, Alexander Granovsky, I. V. Kulemanov, A. Smekhova, N. S. Perov, Semisalova A, L. A. Balagurov, A. F. Orlov
Publikováno v:
Journal of Nanoscience and Nanotechnology. 12:7540-7544
We present recent experimental results on the structural, electrical, magnetic, and magneto-optical properties of Mn-implanted Si and Co-doped TiO(2-delta) magnetic oxides. Si wafers, both n- and p-type, with high and low resistivity, were used as th
Autor:
L. A. Balagurov, A. F. Orlov, Yu. A. Agafonov, A. D. Rubacheva, E. A. Gan’shina, V. V. Saraikin, I. V. Kulemanov, V. I. Zinenko, N. S. Perov, Anna Semisalova
Publikováno v:
Physics of the Solid State. 54:283-286
Magnetic and magnetooptical properties of the Cr-doped GaN layers have been investigated in the temperature range 50–400 K. A high saturation magnetization of 25 G has been observed in the obtained material. Spectra of the magnetooptical transversa
Autor:
I. V. Kulemanov, V. V. Saraikin, L. A. Balagurov, A. F. Orlov, A. V. Kartavykh, Yu. A. Agafonov, Yu. N. Parkhomenko, V. I. Zinenko
Publikováno v:
Semiconductors. 44:28-31
Profiles of impurity distribution and spreading resistance have been studied in the layers of ferromagnetic silicon obtained by implantation of Mn (or Co). Standard wafers of n- and p-Si with a high or low electrical conductivity were implanted with
Autor:
V. V. Saraikin, Yu. A. Agafonov, Andrei Rogalev, L. A. Balagurov, A. F. Orlov, V. I. Zinenko, K. D. Shcherbachev, I. V. Kulemanov, E. A. Gan’shina, Alexander Granovsky, Yu. N. Parkhomenko, V. I. Vdovin, Andrei V. Sapelkin, A. Smekhova, A. V. Kartavykh, N. S. Perov, V. T. Bublik
Publikováno v:
Journal of Experimental and Theoretical Physics. 109:602-608
The structure and the electrical and magnetic properties of Mn-implanted Si, which exhibits ferromagnetic ordering at room temperature, are studied. Single-crystal n- and p-type Si wafers with high and low electrical resistivities are implanted by ma
Autor:
L. A. Balagurov, A. F. Orlov, V. V. Saraĭkin, Yu. A. Agafonov, N. S. Perov, K. D. Shcherbachev, V. I. Zinenko, V. T. Bublik
Publikováno v:
Crystallography Reports. 53:796-799
The structure of manganese-implanted (dose 2 × 1016 cm−2) n-type and p-type silicon, ferromagnetic at room temperature, has been studied. During implantation, an amorphized layer is formed in the silicon wafer. Subsequent vacuum annealing improves
Autor:
D. G. Yarkin, S. O. Klimonsky, A.S. Konstantinova, Andrei V. Sapelkin, N. S. Perov, L. A. Balagurov, A. F. Orlov, S. P. Kobeleva
Publikováno v:
Journal of Physics: Condensed Matter. 18:10999-11005
The structure and magnetic properties of different titanium oxide films doped with magnetic impurities are investigated both in the as-deposited state and after thermal treatments in a vacuum. The samples were characterized by x-ray diffraction (XRD)
Publikováno v:
Electrochimica Acta. 51:2938-2941
The features of electrochemical formation process of porous silicon (PS) at the temperatures above the room temperature have been studied. It was found that besides electrochemical dissolution, chemical etching takes part in the formation process of
Autor:
L. A. Balagurov, G V Liberova, E. A. Petrova, Andrei V. Sapelkin, B.A. Loginov, Bayram Unal, D. G. Yarkin, S Ya Andrushin
Publikováno v:
Semiconductor Science and Technology. 20:1217-1222
Porous silicon (PS) is an excellent material to be used as a sacrificial layer (SL) for the fabrication of membranes, bridges, cantilevers and other complicated micro-sensor structures. Major advantages of this material are its smooth surface and lar