Zobrazeno 1 - 9
of 9
pro vyhledávání: '"L. A. B. Marçal"'
Autor:
L. A. B. Marçal, H. Dierks, V. Bushlya, I. Lazar, D. Dzhigaev, Z. Ren, R. Rysov, A. Björling, M. Sprung, A. Mikkelsen, F. Lenrick, R. M'Saoubi, J. Wallentin
Publikováno v:
Materials & Design, Vol 239, Iss , Pp 112789- (2024)
Inconel 718 is one type of nickel-based alloy used for a large range of applications, including gas turbines and aeroengines components. Although mechanical and thermodynamic properties of this material have been deeply studied in the past years, a m
Externí odkaz:
https://doaj.org/article/1996b0b591124ac59215b4d7ef7bf4d9
Akademický článek
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Autor:
Angelo Malachias, Luciano G. Moura, Ch. Deneke, L. A. B. Marçal, Rodrigo G. Lacerda, Ingrid D. Barcelos
Publikováno v:
RSC Advances. 6:103707-103713
The rolling of semiconductor thin films with graphene layers on top is carried out to integrate distinct material classes. Tubular structures obtained can span from the nanometer to the micrometer range, providing controlled and homogeneous curvature
Autor:
L. N. Coelho, Greg Salamo, Rogério Magalhães-Paniago, L. A. B. Marçal, Euclydes Marega, Angelo Malachias, Mario S. C. Mazzoni
Publikováno v:
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Universidade de São Paulo (USP)
instacron:USP
In this paper we present a method to determine the occupation of Mn ions in epitaxial (In,Mn)As nanostructures by resonant x-ray diffraction near the Mn $K$-absorption edge, exploiting the dependency of the intensity of both (200) superstructure and
Autor:
Barbara L. T. Rosa, L. A. B. Marçal, Raul O. Freitas, Christoph Deneke, Angelo Malachias, Oliver G. Schmidt, Paulo Sérgio Soares Guimarães, G. A. M. Sáfar
Publikováno v:
ACS Photonics. 1:863-870
Semiconductor nanomembranes are promising systems for many applications, since the band structure of a given material can be tailored to achieve specific configurations, which are not feasible by conventional growth procedures on rigid substrates. He
Autor:
Barbara L. T. Rosa, Angelo Malachias, Luciana Dornellas Pinto, L. A. B. Marçal, Rodrigo R. de Andrade, Wagner N. Rodrigues, Patricia L. Souza, Ricardo Nunes, Mauricio P. Pires
Publikováno v:
Nanotechnology. 28:305702
In this work we attempt to directly observe anisotropic partial relaxation of epitaxial InAs islands using transmission electron microscopy (TEM) and synchrotron x-ray diffraction on a 15 nm thick InAs:GaAs nanomembrane. We show that under such condi
Autor:
Ch. Deneke, Angelo Malachias, Max G. Lagally, Rogério Magalhães-Paniago, Marie-Ingrid Richard, Oliver G. Schmidt, T. U. Schülli, L. A. B. Marçal, Francesca Cavallo
Publikováno v:
Applied Physics Letters. 106:151905
Semiconductor heteroepitaxy on top of thin compliant layers has been explored as a path to make inorganic electronics mechanically flexible as well as to integrate materials that cannot be grown directly on rigid substrates. Here, we show direct evid
Autor:
Angelo Malachias, L. A. B. Marçal, Victor Lopez-Richard, Euclydes Marega, Jiang Wu, Georgiy G. Tarasov, V. Lopes-Oliveira, Gregory J. Salamo, Leonardo Dias de Souza, Vitaliy G. Dorogan, Gilmar E. Marques, Yuriy I. Mazur, Zhiming Wang, Mourad Benamara, Marcio D. Teodoro, Milan Orlita
Publikováno v:
HAL
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2014, 90 (12)
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 2014, 90 (12)
Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual)
Universidade de São Paulo (USP)
instacron:USP
The optical analysis of multilayer structures formed from the topmost layer of InGaAs/GaAs quantum rings (QRs) grown on a vertically stacked and laterally aligned InGaAs/GaAs quantum dot (QD) superlattice has been performed to elucidate the nature of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b0f8b726ed71107f43df5a3f560c9079
https://hal.archives-ouvertes.fr/hal-01992727
https://hal.archives-ouvertes.fr/hal-01992727
Publikováno v:
New Journal of Physics, Vol 23, Iss 6, p 063035 (2021)
Metal halide perovskites attract significant interest due to their remarkable performance in optoelectronic devices. However, the gap in understanding the relationship between their nanoscale structure and properties limits their application towards
Externí odkaz:
https://doaj.org/article/7e9078ffd0d74c31814990c5bbe693f9