Zobrazeno 1 - 6
of 6
pro vyhledávání: '"L. A. Alexanyan"'
Autor:
Yu. V. Kotovskaya, N. K. Runikhina, Olga N. Tkacheva, A S Milto, A. V. Naumov, L. A. Alexanyan, A. D. Meshkov, A. V. Rozanov, T. M. Manevich, V. I. Moroz, V. S. Ostapenko, N. O. Khovasova
Publikováno v:
Russian Journal of Geriatric Medicine. :275-320
The present document developed by the Russian Association of Gerontologists and Geriatricians represents the Clinical guidelines on chronic pain in older and senile patients. The Clinical guidelines were endorsed by Scientific Council of the Ministry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::835e0b398393576fb34d6a3d6f506167
https://doi.org/10.37586/2686-8636-3-2021-275-312
https://doi.org/10.37586/2686-8636-3-2021-275-312
Autor:
V. N. Murashev, L. A. Alexanyan, In Hwan Lee, Taehwan Kim, Alexander Y. Polyakov, Ivan Shchemerov, A. V. Chernykh, S. J. Pearton, M. L. Skorikov
Publikováno v:
Journal of Alloys and Compounds. 888:161947
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::600f5da3f3906644b9ce2638184e8446
https://doi.org/10.1016/j.jallcom.2021.161947
https://doi.org/10.1016/j.jallcom.2021.161947
Autor:
Raphaël Butté, N. B. Smirnov, A. I. Kochkova, S.A. Shikoh, Yu. S. Pavlov, Stephen J. Pearton, J.-F. Carlin, Camille Haller, Ivan Shchemerov, L. A. Alexanyan, Nicolas Grandjean, P. B. Lagov, Mauro Mosca, Alexander Y. Polyakov, A. V. Chernykh
Publikováno v:
Journal of alloys and compounds, 845. Elsevier
The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39df21169f4b244177d1c62a665d7f96
https://doi.org/10.1016/j.jallcom.2020.156269
https://doi.org/10.1016/j.jallcom.2020.156269
Autor:
Mauro Mosca, Nicolas Grandjean, L. A. Alexanyan, P. B. Lagov, Raphaël Butté, Alexander Y. Polyakov, S. V. Chernykh, J.-F. Carlin, A. S. Shiko, Yu. S. Pavlov, Stephen J. Pearton, Camille Haller, Ivan Shchemerov, N. B. Smirnov
Publikováno v:
Journal of Applied Physics. 126:125708
Two types of near-UV light-emitting diodes (LEDs) with an InGaN/GaN single quantum well (QW) differing only in the presence or absence of an underlayer (UL) consisting of an InAlN/GaN superlattice (SL) were examined. The InAlN-based ULs were previous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b9586ae9a2cb7dee75959f89be8b6f3
https://doi.org/10.1063/1.5122314
https://doi.org/10.1063/1.5122314
Autor:
N. M. Shmidt, Ivan Shchemerov, Alexander Y. Polyakov, S. A. Tarelkin, N. B. Smirnov, L. A. Alexanyan, E. I. Shabunina, In Hwan Lee, N. A. Tal'nishnih, Stephen J. Pearton
Publikováno v:
Journal of Applied Physics. 125:215701
Some green light emitting diodes (LEDs) based on GaN/InGaN multiquantum-well (MQW) structures exhibit strong frequency and temperature dependence of capacitance and prominent changes in capacitance–voltage profiles with temperature that make it dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::308bf0e1b774d3531e6dd61f58db3ebc
https://doi.org/10.1063/1.5093723
https://doi.org/10.1063/1.5093723
Autor:
Nicolas Grandjean, Mauro Mosca, A. I. Kochkova, P. B. Lagov, Alexander Y. Polyakov, Ali Sehpar Shikoh, L. A. Alexanyan, S. J. Pearton, Ivan Shchemerov, Raphaël Butté, J.-F. Carlin, N. B. Smirnov, S. V. Chernykh, Camille Haller, Yu. S. Pavlov
The electrical properties, electroluminescence (EL) power output and deep trap spectra were studied before and after 5 MeV electron irradiation of near-UV single-quantum-well (SQW) light-emitting diodes (LED) structures differing by the presence or a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c76ad2f5bf1ea885f321a926b299b2a8
https://infoscience.epfl.ch/record/279855
https://infoscience.epfl.ch/record/279855
