Zobrazeno 1 - 10
of 141
pro vyhledávání: '"L Ya Karachinsky"'
Autor:
A. V. Babichev, E. S. Kolodeznyi, A.G. Gladyshev, D. V. Denisov, G. V. Voznyuk, M. I. Mitrofanov, D. A. Mikhailov, D. V. Chistyakov, D. I. Kuritsyn, V. V. Dudelev, S. O. Slipchenko, A. V. Lyutetskii, V. P. Evtikhiev, L. Ya. Karachinsky, I. I. Novikov, S. V. Morozov, G. S. Sokolovskii, N. A. Pikhtin, A. Yu. Egorov
Publikováno v:
Semiconductors. 56:1-4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f25edca47d7c4f8ab82dc89b72baff4b
https://doi.org/10.1134/s106378262201002x
https://doi.org/10.1134/s106378262201002x
Autor:
A. V. Babichev, E. S. Kolodeznyi, A. G. Gladyshev, D. V. Denisov, G. V. Voznyuk, M. I. Mitrofanov, N. Yu. Kharin, V. Yu. Panevin, S. O. Slipchenko, A. V. Lyutetskii, V. P. Evtikhiev, L. Ya. Karachinsky, I. I. Novikov, N. A. Pikhtin, A. Yu. Egorov
Publikováno v:
Semiconductors. 55:591-594
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de2eb138cf98cc29dc9b9455b75fea84
https://doi.org/10.1134/s106378262107006x
https://doi.org/10.1134/s106378262107006x
Autor:
A. V. Babichev, N. V. Kryzhanovskaya, D. V. Denisov, A. G. Gladyshev, E. S. Kolodeznyi, Alexey M. Nadtochiy, A. Yu. Egorov, Innokenty I. Novikov, Anna S. Dragunova, L. Ya. Karachinsky, A. V. Uvarov, S. D. Komarov, V. V. Andryushkin
Publikováno v:
Optics and Spectroscopy. 129:256-260
The optical properties of three-dimensional quantum-size InGaPAs islands, which are formed by substitution of phosphorous by arsenic in an InGaPAs layer deposited on GaAs directly during the epitaxial growth, are studied by photoluminescence (PL) spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c457ee67df56bdcce7d7b8a967fff8f4
https://doi.org/10.1134/s0030400x21020089
https://doi.org/10.1134/s0030400x21020089
Autor:
V. V. Dudelev, E. D. Cherotchenko, D. A. Mikhailov, G. Savchenko, S. Losev, A. V. Babichev, A. G. Gladyshev, I. I. Novikov, A. V. Lyutetskiy, S. O. Slipchenko, N. A. Pikhtin, L. Ya. Karachinsky, A.Yu. Egorov, G. S. Sokolovskii
Publikováno v:
2022 International Conference Laser Optics (ICLO).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::244de746caac7b5bf06fdf501cd88eb5
https://doi.org/10.1109/iclo54117.2022.9840330
https://doi.org/10.1109/iclo54117.2022.9840330
Autor:
A.V. Babichev, D.A. Mikhailov, E.S. Kolodeznyi, A.G. Gladyshev, G.V. Voznyuk, M.I. Mitrofanov, S.O. Slipchenko, A.V. Lyutetskii, V.V. Dudelev, V.P. Evtikhiev, L. Ya. Karachinsky, I.I. Novikov, G.S. Sokolovskii, N.A. Pikhtin, A. Yu. Egorov
Publikováno v:
2022 International Conference Laser Optics (ICLO).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b9e32158014080e72a29d0ebb71e1b5
https://doi.org/10.1109/iclo54117.2022.9840033
https://doi.org/10.1109/iclo54117.2022.9840033
Autor:
Innokenty I. Novikov, V. N. Nevedomskii, E. S. Kolodeznyi, V. V. Andryushkin, A. V. Babichev, A. G. Gladyshev, L. Ya. Karachinsky, D. V. Denisov, A. Yu. Egorov
Publikováno v:
Technical Physics. 65:2047-2050
A new method for the formation of three-dimensional quantum-dimensional InGaP(As) islands is proposed, which consists in replacing phosphorus with arsenic in an InGaP layer deposited on GaAs directly during epitaxial growth. It is shown that the repl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::080dbb5b06153b8a585ca711a7a09eba
https://doi.org/10.1134/s1063784220120099
https://doi.org/10.1134/s1063784220120099
Autor:
A. A. Blokhin, Innokenty I. Novikov, D. V. Denisov, A. V. Babichev, M. A. Bobrov, Nikolai A. Maleev, S. S. Rochas, S. A. Blokhin, A. G. Kuzmenkov, L. Ya. Karachinsky, A. P. Vasil’ev, K. O. Voropaev, A. Yu. Egorov, V. M. Ustinov, A. S. Ionov, A. G. Gladyshev
Publikováno v:
Technical Physics Letters. 46:1257-1262
An investigation has been performed of 1.55-μm vertical-cavity surface-emitting lasers based on heterostructures with a buried tunnel junction (BTJ) with a height difference of 15 nm. The devices are obtained by wafer fusion of heterostructures grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a62c9ad38d363aff5e9005d2930f6cf0
https://doi.org/10.1134/s1063785020120172
https://doi.org/10.1134/s1063785020120172
Autor:
V. P. Evtikhiev, M. I. Mitrofanov, D. I. Kuritsyn, E. S. Kolodeznyi, D. V. Denisov, G. V. Voznyuk, A. G. Gladyshev, A. V. Lyutetskii, Nikita A. Pikhtin, Anton Yu. Egorov, L. Ya. Karachinsky, A. V. Babichev, Sergey O. Slipchenko, Innokenty I. Novikov, S. V. Morozov
Publikováno v:
Semiconductors. 54:1816-1819
We have created a quantum-cascade laser with 7–8 μm wavelength and surface radiation output through a lattice formed by focused ion beam etching of the upper cladding of the waveguide. The active area of the quantum-cascade laser heterostructure w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac4dedfae79a45bf91e3eb1873bb8a5c
https://doi.org/10.1134/s106378262014002x
https://doi.org/10.1134/s106378262014002x
Autor:
L. Ya. Karachinsky, A. Yu. Egorov, V. N. Nevedomskii, A. V. Babichev, D. V. Denisov, Innokenty I. Novikov, E. S. Kolodeznyi, A. G. Gladyshev, Vladislav E. Bougrov, S. S. Rochas, V. V. Andryushkin
Publikováno v:
Technical Physics Letters. 46:1128-1131
We have studied heterostructures based on short-period InGaAs/InGaAlAs superlattices (SLs) manufactured by molecular-beam epitaxy on InP substrates, intended for use as active regions in vertical-cavity surface-emitting lasers operating in a 1.3-μm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2555f5f87bd7335314e5aec26860d30e
https://doi.org/10.1134/s1063785020110267
https://doi.org/10.1134/s1063785020110267
Autor:
E. A. Kognovitskaya, G. M. Savchenko, A. V. Lyutetskii, D. V. Denisov, A. G. Gladyshev, S. N. Losev, Vladislav V. Dudelev, A. V. Babichev, L. Ya. Karachinsky, Grigorii S. Sokolovskii, I. I. Novikov, Sergey O. Slipchenko, Nikita A. Pikhtin, V. I. Kuchinskii, A. Yu. Egorov, D. A. Mikhailov
Publikováno v:
Quantum Electronics. 50:989-994
Quantum-cascade room-temperature 4.5 – 4.6 μm lasers with different numbers of quantum cascades are developed and studied. It is shown that losses at the metallised sidewalls of the ridge waveguide considerably increase the threshold current densi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc177923bef596a1f02a58b7d610ef04
https://doi.org/10.1070/qel17396
https://doi.org/10.1070/qel17396