Zobrazeno 1 - 10
of 72
pro vyhledávání: '"L W Martin"'
Autor:
R. Xu, S. Liu, S. Saremi, R. Gao, J. J. Wang, Z. Hong, H. Lu, A. Ghosh, S. Pandya, E. Bonturim, Z. H. Chen, L. Q. Chen, A. M. Rappe, L. W. Martin
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-10 (2019)
The use of ferroeletric materials for multi-state device applications is still challenging. Here, the authors present a mechanism to stabilize non-volatile polarization states by populating volume fractions of two domain structures in PbZr0.2Ti0.8O3
Externí odkaz:
https://doaj.org/article/afe9766bd2dd4d6eb383b8d842d09d63
Publikováno v:
APL Materials, Vol 8, Iss 12, Pp 120902-120902-10 (2020)
Topological structures in ferroic materials have drawn great interest in recent years due to the richness of the underlying physics and the potential for applications in next generation electronics. Recent advances in atomically precise thin-film mat
Externí odkaz:
https://doaj.org/article/e576e7f3cd284c1c817ea96559457026
Autor:
L. M. Zheng, X. Renshaw Wang, W. M. Lü, C. J. Li, T. R. Paudel, Z. Q. Liu, Z. Huang, S. W. Zeng, Kun Han, Z. H. Chen, X. P. Qiu, M. S. Li, Shize Yang, B. Yang, Matthew F. Chisholm, L. W. Martin, S. J. Pennycook, E. Y. Tsymbal, J. M. D. Coey, W. W. Cao
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-7 (2018)
An ambipolar ferromagnet with both electron- and hole-doped ferromagnetism in a single material would facilitate understanding of ferromagnetic semiconductors for spintronic applications. Here the authors demonstrate ambipolar ferromagnetism in LaMnO
Externí odkaz:
https://doaj.org/article/d2efc84b18c3483987fabaa6583e64a2
Autor:
Q. Li, C. T. Nelson, S.-L. Hsu, A. R. Damodaran, L.-L. Li, A. K. Yadav, M. McCarter, L. W. Martin, R. Ramesh, S. V. Kalinin
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
Flexoelectric coupling between strain gradients and polarization influences the physics of ferroelectric devices but it is difficult to directly probe its effects. Here, Li et al. use principal component analysis to compare STEM images with phase-fie
Externí odkaz:
https://doaj.org/article/5c2afb0ab0ce462a92da7d13496d55bb
Autor:
K. X. Nguyen, Y. Jiang, M. C. Cao, P. Purohit, A. K. Yadav, P. García-Fernández, M. W. Tate, C. S. Chang, P. Aguado-Puente, J. Íñiguez, F. Gomez-Ortiz, S. M. Gruner, J. Junquera, L. W. Martin, R. Ramesh, D. A. Muller
Publikováno v:
Physical Review B. 107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b14bbfccd28c104bfdd7613ea13435a1
https://doi.org/10.1103/physrevb.107.205419
https://doi.org/10.1103/physrevb.107.205419
Autor:
Y. Jiang, E. Parsonnet, A. Qualls, W. Zhao, S. Susarla, D. Pesquera, A. Dasgupta, M. Acharya, H. Zhang, T. Gosavi, C.-C. Lin, D. E. Nikonov, H. Li, I. A. Young, R. Ramesh, L. W. Martin
Publikováno v:
Nature materials, vol 21, iss 7
Single crystals of BaTiO3 exhibit small switching fields and energies, but thin-film performance is considerably worse, thus precluding their use in next-generation devices. Here, we demonstrate high-quality BaTiO3 thin films with nearly bulk-like pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d82610eea9ac6c3a52d94d499e4d85cf
https://doi.org/10.1038/s41563-022-01266-6
https://doi.org/10.1038/s41563-022-01266-6
Autor:
Y, Jiang, E, Parsonnet, A, Qualls, W, Zhao, S, Susarla, D, Pesquera, A, Dasgupta, M, Acharya, H, Zhang, T, Gosavi, C-C, Lin, D E, Nikonov, H, Li, I A, Young, R, Ramesh, L W, Martin
Publikováno v:
Nature materials. 21(7)
Single crystals of BaTiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::220e77dc67aabe70019ee7424ec01844
https://pubmed.ncbi.nlm.nih.gov/35618823
https://pubmed.ncbi.nlm.nih.gov/35618823
Autor:
A K, Yadav, C T, Nelson, S L, Hsu, Z, Hong, J D, Clarkson, C M, Schlepütz, A R, Damodaran, P, Shafer, E, Arenholz, L R, Dedon, D, Chen, A, Vishwanath, A M, Minor, L Q, Chen, J F, Scott, L W, Martin, R, Ramesh
Publikováno v:
Nature. 534(7605)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::fed3fea7626a7054dd260931510d0cd3
https://pubmed.ncbi.nlm.nih.gov/26814971
https://pubmed.ncbi.nlm.nih.gov/26814971
Publikováno v:
Physical review letters. 110(19)
We demonstrate a link between the growth process, the stoichiometry of LaAlO(3), and the interfacial electrical properties of LaAlO(3)/SrTiO(3) heterointerfaces. Varying the relative La:Al cation stoichiometry by a few atomic percent in films grown a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::1aae08119406b311eb07bd34f2c70469
https://pubmed.ncbi.nlm.nih.gov/23705735
https://pubmed.ncbi.nlm.nih.gov/23705735
Publikováno v:
Physical review letters. 109(25)
We have investigated the contribution of 90° domain walls and thermal expansion mismatch to pyroelectricity in PbZr(0.2)Ti(0.8)O(3) thin films. The first phenomenological models to include extrinsic and secondary contributions to pyroelectricity in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::593fcaa5dd6863436d14a4f9855aab58
https://pubmed.ncbi.nlm.nih.gov/23368500
https://pubmed.ncbi.nlm.nih.gov/23368500