Zobrazeno 1 - 10
of 28
pro vyhledávání: '"L R Grigoryan"'
Publikováno v:
IZVESTIYA SFedU. ENGINEERING SCIENCES. :213-221
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f753c073f1b061196df9d44e98fd8eab
https://doi.org/10.18522/2311-3103-2022-4-213-221
https://doi.org/10.18522/2311-3103-2022-4-213-221
Publikováno v:
Kontrol'. Diagnostika. :12-17
The comparative analysis of switching methods of transformation of phase information is carried out in work. Following the proposed classification, the advantages, disadvantages, and scope of the methods of low-frequency filtering and high-purity sam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b57c6125e1c44a7c4939b95d2135fa3
https://doi.org/10.14489/td.2022.10.pp.012-017
https://doi.org/10.14489/td.2022.10.pp.012-017
Autor:
L. R. Grigoryan, N. M. Bogatov
Publikováno v:
Kontrol'. Diagnostika. :28-34
These volumes explore method for the rapid assessment of the insulation resistance of underground pipelines in order to reduce the duration and complexity of route work in the process of electrometric inspection of utilities. The idea of the method i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ade848c7e537560aee94033ac374f2a
https://doi.org/10.14489/td.2020.07.pp.028-034
https://doi.org/10.14489/td.2020.07.pp.028-034
Autor:
N. M. Bogatov, A. N. Bogatova, S. A. Sukhih, L. R. Grigoryan, M. S. Kovalenko, A. A. Nosal, D. A. Schetinin
Publikováno v:
PROCEEDINGS OF THE II INTERNATIONAL SCIENTIFIC CONFERENCE ON ADVANCES IN SCIENCE, ENGINEERING AND DIGITAL EDUCATION: (ASEDU-II 2021).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fb774738e67a28adbaa29210cc3bc9e
https://doi.org/10.1063/5.0104207
https://doi.org/10.1063/5.0104207
Autor:
L. R. Grigoryan, N. M. Bogatov
Publikováno v:
Kontrol'. Diagnostika. :50-57
The paper discusses new circuit solutions in the practice of electrochemical protection of pipelines. The aim of the work is to develop methods for measuring the polarization potential between the two control and measuring points of the pipeline unde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13684a032def2efe471fa366ef62b942
https://doi.org/10.14489/td.2019.10.pp.050-057
https://doi.org/10.14489/td.2019.10.pp.050-057
Publikováno v:
Medical Research Archives. 8
Human body is an open energy system. Aggressive environment forces us to adapt to modern social and economic conditions, technogenic factors and increasing psychological, physical and informational overload. Physiological self-regulation is realized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43f62808e259b35826c1c62c5d720e3e
https://doi.org/10.18103/mra.v8i7.2157
https://doi.org/10.18103/mra.v8i7.2157
Publikováno v:
Journal of Physics: Conference Series. 2094:022006
The effect of low-energy proton irradiation on the pulse characteristics of siliconn+-p-p+structures is analyzed. It is shown that irradiation with protons with an energy of 180 keV and a dose of 1015cm−2creates a region with an effective lifetime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d8409a39cf8cab422c9b1245c99302b
https://doi.org/10.1088/1742-6596/2094/2/022006
https://doi.org/10.1088/1742-6596/2094/2/022006
Publikováno v:
Journal of Physics: Conference Series. 2094:022020
The article presents the results of modeling the effect of the effective lifetime in the space charge region (SCR) of the n+-p junction on the impulse characteristics of silicon structures. The model is based on solving the fundamental system of diff
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0805f3c9997a3b538480d9192abfe25
https://doi.org/10.1088/1742-6596/2094/2/022020
https://doi.org/10.1088/1742-6596/2094/2/022020
Publikováno v:
Journal of Physics: Conference Series. 1679:032077
Based on numerical simulation, the influence of the position in the band gap of the Fermi quasilevel of electrons on the dependence of the linear generation rate of interstitial silicon, vacancies, divacancies, and disordering regions in silicon irra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce7e016b89736c27a54b2261e459c27b
https://doi.org/10.1088/1742-6596/1679/3/032077
https://doi.org/10.1088/1742-6596/1679/3/032077
Publikováno v:
Journal of Physics: Conference Series. 1278:012006
Modelling n-p-junction is an urgent task, because theoretical models do not describe all the properties of semiconductor structures with different content of impurities. The influence of impurities on the properties of asymmetric n-p-junction was ana
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4cb373263df4d2118a4071677d859d7
https://doi.org/10.1088/1742-6596/1278/1/012006
https://doi.org/10.1088/1742-6596/1278/1/012006