Performance and Modeling of Si-Nanocrystal Double-Layer Memory Devices With High- $k$ Control Dielectrics

Autor: G. Gay, G. Molas, M. Bocquet, E. Jalaguier, M. Gely, L. Masarotto, J. P. Colonna, H. Grampeix, F. Martin, P. Brianceau, V. Vidal, R. Kies, T. Baron, G. Ghibaudo, B. De Salvo

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2012, 59 (4), pp.933-940. ⟨10.1109/TED.2012.2182769⟩
IEEE Transactions on Electron Devices, 2012, 59 (4), pp.933-940. ⟨10.1109/TED.2012.2182769⟩

In this paper, memory devices integrating a double layer of silicon nanocrystals (Si-ncs) as a trapping medium and a HfAlO-based control dielectrics are presented. We will show that the use of two stacked Si-nc layers significantly improves the memor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e825636024ee58517081533b61029f2
https://doi.org/10.1109/ted.2012.2182769

Application of UV Scanning Photoluminescence Spectroscopy for Minority Carrier Lifetime Mapping

Autor: L. Masarotto, I. El Harrouni, Gérard Guillot, Jean-Marie Bluet

Publikováno v: Materials Science Forum. :349-352

In this work, a method to obtain the Shockley-Read-Hall (SRH) minor ity carrier lifetime from the room temperature photoluminescence intensity is proposed. Indeed, taking into ac count the different recombination mechanisms, we calculate the photolum

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c8e588c30cca055d2c5d80baad17505b
https://doi.org/10.4028/www.scientific.net/msf.433-436.349

Reduced pressure–chemical vapor deposition of high Ge content Si/SiGe superlattices for 1.3μm photo-detection

Autor: M.N. Séméria, J.M. Hartmann, G. Rolland, A.M Papon, Georges Bremond, L Masarotto

Publikováno v: Journal of Crystal Growth. 255:8-18

SiGe-based photodetectors operating at 1.3 μm are highly desirable for the development of optical interconnections on SOI substrates. We have therefore investigated the structural and optical properties of high Ge concentration Si/SiGe multi-quantum

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6a2aa892e1c6f99b5efaa9bcec210d42
https://doi.org/10.1016/s0022-0248(03)01168-0

UV Scanning Photoluminescence Spectroscopy Investigation of 6H- and 4H-SiC

Autor: Gérard Guillot, L. Masarotto, Jean-Marie Bluet

Publikováno v: Materials Science Forum. :601-604

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1ded7b61993aee5b070c3052d392e434
https://doi.org/10.4028/www.scientific.net/msf.389-393.601

Hybrid silicon nanocrystals/SiN charge trapping layer with high-k dielectrics for FN and CHE programming

Autor: G. Gay, G. Molas, M. Bocquet, E. Jalaguier, M. Gely, L. Masarotto, J. P. Colonna, H. Grampeix, F. Martin, P. Brianceau, V. Vidal, R. Kies, C. Bongiorno, S. Lombardo, T. Baron, G. Ghibaudo, B. De Salvo

Publikováno v: International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Hsin Chu, Taiwan, 2010
info:cnr-pdr/source/autori:Gay G, Molas G, Bocquet M, Jalaguier E, Gely M, Masarotto L, Colonna JP, Grampeix H, Martin F, Brianceau P, Vidal V, Kies R, Bongiorno C, Lombardo S, Baron T, Ghibaudo G, De Salvo B/congresso_nome:International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA)/congresso_luogo:Hsin Chu, Taiwan/congresso_data:2010/anno:2010/pagina_da:/pagina_a:/intervallo_pagine

Silicon nanocrystal (Si-nc) trapping layers offer several advantages on standard poly-Si floating gates, as improved data retention after endurance in particular at high temperatures [1][2], robustness toward oxide defects, two-bits per cell storage

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af10941f5b2a2dbc7f9981705b1cafa5
https://publications.cnr.it/doc/86988