Zobrazeno 1 - 10
of 63
pro vyhledávání: '"L M. Zinkiewicz"'
Publikováno v:
Applied Physics Letters. 40:513-515
Electron drift velocities in (100) GaAs have been measured at various temperatures from 95 to 385 K for electric field strengths from about 15 to 160 kV/cm at most temperatures and as high as 236 kV/cm at 300 K using a microwave time‐of‐flight te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6f6e28afbed599f05753a5020b2aa0b
https://doi.org/10.1063/1.93161
https://doi.org/10.1063/1.93161
Publikováno v:
Applied Physics Letters. 43:378-380
Experimental conditions suitable for the liquid phase epitaxial growth of InP epilayers with resistivities >105 Ω cm have been investigated. It has been found that the resistivities of Fe‐doped InP layers are, in fact, less than the resistivity of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e22df660dba6d3c43cb0fbbe45a5aaa8
https://doi.org/10.1063/1.94350
https://doi.org/10.1063/1.94350
Publikováno v:
Semiconductor Growth Technology.
Over the past decade indium phosphide has become one of the most intensively studied semiconducting materials. A high saturation velocity and large peak to valley ratio in its velocity field characteristic make it an attractive alternative for many h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64a69a26234d39d48f73356020c199ba
https://doi.org/10.1117/12.934273
https://doi.org/10.1117/12.934273
Publikováno v:
SPIE Proceedings.
Recent results of our work an InGaAsP/InP single element, diode lasers are presented. Two structures are compared: 1) the double channel planar buried heterostructure (DCPBH) and 2) the buried crescent on p-type substrates (p-BC), for power and optic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6019235fbafce121a0f9a0655aea77b0
https://doi.org/10.1117/12.944355
https://doi.org/10.1117/12.944355
Publikováno v:
Topical Meeting on Semiconductor Lasers.
The twin-channel laser (TCL)(1) consists of two (substrate) channels separated by a shallow mesa, with current confinement provided by back-biased pn junctions on both sides of the structure. Due to enhanced gain above the mesa, the symmetric mode is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4e61b8ba115de78cf99cd7607e6d909
https://doi.org/10.1364/sla.1987.wb3
https://doi.org/10.1364/sla.1987.wb3
Publikováno v:
Optical Fiber Communication.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48fd9a654370bf3e0c509c1db727d2ba
https://doi.org/10.1364/ofc.1986.tul16
https://doi.org/10.1364/ofc.1986.tul16
Publikováno v:
Topical Meeting on Semiconductor Lasers.
Misaligning the waveguide structure of the twin channel laser (1) with respect to the wafer cleavage plane can create a condition that Fresnel reflection from the cleave will not be captured by the lateral waveguide (Figure 1). Most of the light refl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::607ac5c79e040ae898d3eb3a2ddaf189
https://doi.org/10.1364/sla.1987.tuc2
https://doi.org/10.1364/sla.1987.tuc2
Publikováno v:
Journal of Applied Physics; 5/1/1992, Vol. 71 Issue 9, p4612, 3p, 1 Chart, 3 Graphs
Autor:
Reklaitis, A.
Publikováno v:
Journal of Applied Physics; 7/15/1996, Vol. 80 Issue 2, p1242, 3p, 3 Graphs
Publikováno v:
Properties of Group-IV, III-V & II-VI Semiconductors; 2005, p315-372, 58p